2016
DOI: 10.1126/science.aad4424
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Photovoltaic materials: Present efficiencies and future challenges

Abstract: Recent developments in photovoltaic materials have led to continual improvements in their efficiency. We review the electrical characteristics of 16 widely studied geometries of photovoltaic materials with efficiencies of 10 to 29%. Comparison of these characteristics to the fundamental limits based on the Shockley-Queisser detailed-balance model provides a basis for identifying the key limiting factors, related to efficient light management and charge carrier collection, for these materials. Prospects for pra… Show more

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Cited by 1,772 publications
(1,378 citation statements)
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References 39 publications
(37 reference statements)
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“…Cu 2 ZnSnS 4 has a similar Urbach energy and has a V OC 0.5 V below its Shockley-Queisser limit value. [46,50] Band tails and sub-bandgap states present in the NiO x ( Figure S43, Supporting Information) and ZnO layers (measured previously, [45,51] and from Figure S42, Supporting Information) can also lead to V OC losses due to carrier thermalization or recombination from the band tails. [45,52] Further device modeling and temperature-dependent V OC measurements are required to quantify the magnitudes of these different effects.…”
mentioning
confidence: 68%
See 1 more Smart Citation
“…Cu 2 ZnSnS 4 has a similar Urbach energy and has a V OC 0.5 V below its Shockley-Queisser limit value. [46,50] Band tails and sub-bandgap states present in the NiO x ( Figure S43, Supporting Information) and ZnO layers (measured previously, [45,51] and from Figure S42, Supporting Information) can also lead to V OC losses due to carrier thermalization or recombination from the band tails. [45,52] Further device modeling and temperature-dependent V OC measurements are required to quantify the magnitudes of these different effects.…”
mentioning
confidence: 68%
“…[46] One factor possibly limiting the V OC is nonradiative recombination due to shunt pathways or limited carrier collection (as discussed above). From the J-V curves of our devices, we estimated the shunt resistance to be 230 Ω cm 2 under 1 sun illumination (Figure 3f).…”
mentioning
confidence: 99%
“…112 When a Rashba or Dresselhaus effect is observed on the valence and/or conduction band one can expect effect on the lifetime of the carriers. Indeed, it has been proposed that the band splitting resulting of these effects would enhance the lifetime of charge carriers because of spin-forbidden transitions 113 and the resulting A c c e p t e d m a n u s c r i p t indirect band gap.…”
Section: Effect On Carrier Lifetimementioning
confidence: 99%
“…To increase the photocurrent and then the power conversion efficiency, light harvesting strategies have to be introduced in order to trap the light in the active region while minimizing reflection and parasitic absorption. Based on the significant prospective benefits of reduced thickness, such as lower production costs and feasibility of materials with lower carrier diffusion length, the design of efficient light-management concepts is achieving more and more importance [1][2][3][4]. Both more mature technologies and the emerging families of polymer and perovskite solar cells can gain from the implementation of such strategies [5][6][7][8][9].…”
Section: Introductionmentioning
confidence: 99%