Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

Kou, Kuang-Yang; Huang, Yen-Fang; Chen, Chien‐Hsun; Feng, Shih‐Wei

doi:10.3762/bjnano.7.9

Cited by 19 publications

(7 citation statements)

References 23 publications

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“…Phonon deformation potential constants for the A 1 (TO) mode are a = −774 and b = −375 cm −1 , with elastic constants C 33 = 216 GPa and C 13 = 104 GPa. 26 It is observed from the estimated strain values [Figure S5b] that the strain increases with increasing x and a similar trend have been observed from the strain calculated from XRD analysis. E 1 (LO) Raman mode also can be related to crystal imperfections.…”

Section: Methodssupporting

confidence: 78%

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Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications

Ayaz

Mishra

Sharma

et al. 2020

ACS Appl. Nano Mater.

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The structural, optoelectronic, and electrochemical properties of the sol–gel prepared Zn1–x (Ga0.5Al0.5) x O samples are explored for their possible supercapacitor applications. Rietveld analysis of X-ray diffraction patterns confirms that all samples crystallize in a single wurtzite structure. Ga and Al incorporation in ZnO leads to generate lattice strain in a host lattice, resulting in reduction in the crystalline nature of the samples. The variation in the band gap with increasing Ga and Al content was found to be better scaled with the lattice parameters. Photoluminescence studies suggest a defective lattice for x = 0.03, because of the formation of more defect states such as oxygen vacancies near the band-edges. X-ray photoelectron spectroscopy analysis at the O 1s edges supports the presence of oxygen-related defects in the samples. A varying color emission from yellow to orange was observed with the codoping as revealed from photoluminescence studies. However, oxygen interstitial defects result in enhanced conductivity for the x = 0.01 sample. The enhanced electrochemical performance was also achieved for the x = 0.01 sample with a higher specific capacitance. The simultaneous doping of Ga and Al gives a more extensive range of physical, optoelectronic, and electrochemical properties of ZnO nanoparticles for supercapacitor applications.

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Section: Methodssupporting

confidence: 78%

“…24,25 The lattice strain corresponding to the Raman frequency shift of A 1 (TO) reflects the strength of the polar lattice. 26 This mode has a characteristic frequency of ω 0 = 379 cm −1 . In a hexagonal system, the strain is related as…”

Section: Methodsmentioning

confidence: 99%

Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications

Ayaz

Mishra

Sharma

et al. 2020

ACS Appl. Nano Mater.

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“…As a result, the measured CL intensity should be proportional to the degree of crystallization of ZnO grains. An emission peak around 378 nm (3.28 eV) is related to a band-to-band transition [4–5]. The CL intensity of the sample ZnO p(100) is stronger than that of the sample ZnO p(111) , while both of them are much stronger than that of the sample ZnO t(100) .…”

Section: Resultsmentioning

confidence: 99%

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

Tsai

Lai

Feng

et al. 2017

Beilstein J. Nanotechnol.

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In this work, textured, well-faceted ZnO materials grown on planar Si(100), planar Si(111), and textured Si(100) substrates by low-pressure chemical vapor deposition (LPCVD) were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and cathode luminescence (CL) measurements. The results show that ZnO grown on planar Si(100), planar Si(111), and textured Si(100) substrates favor the growth of ZnO(110) ridge-like, ZnO(002) pyramid-like, and ZnO(101) pyramidal-tip structures, respectively. This could be attributed to the constraints of the lattice mismatch between the ZnO and Si unit cells. The average grain size of ZnO on the planar Si(100) substrate is slightly larger than that on the planar Si(111) substrate, while both of them are much larger than that on the textured Si(100) substrate. The average grain sizes (about 10–50 nm) of the ZnO grown on the different silicon substrates decreases with the increase of their strains. These results are shown to strongly correlate with the results from the SEM, AFM, and CL as well. The reflectance spectra of these three samples show that the antireflection function provided by theses samples mostly results from the nanometer-scaled texture of the ZnO films, while the micrometer-scaled texture of the Si substrate has a limited contribution. The results of this work provide important information for optimized growth of textured and well-faceted ZnO grown on wafer-based silicon solar cells and can be utilized for efficiency enhancement and optimization of device materials and structures, such as heterojunction with intrinsic thin layer (HIT) solar cells.

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“…With more impurity incorporations inside the LT-21 sample, carrier-impurity atom scattering would slow down the mobility. In addition, the sheet resistance is inversely proportional to the film thickness [22]. Hence, sheet resistance in thicker GaN layer becomes lower.…”

Section: Resultsmentioning

confidence: 99%

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

et al. 2016

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In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

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Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

Cited by 19 publications

References 23 publications

Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications

Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

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Dependence of lattice strain relaxation, absorbance, and sheet resistance on thickness in textured ZnO@B transparent conductive oxide for thin-film solar cell applications

Cited by 19 publications

References 23 publications

Structural, Optoelectronic, and Electrochemical Properties of Zn1–x(Ga0.5Al0.5)xO Nanoparticles for Supercapacitor Applications

Structural, Optoelectronic, and Electrochemical Properties of Zn1–x(Ga0.5Al0.5)xO Nanoparticles for Supercapacitor Applications

Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN

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Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications

Structural, Optoelectronic, and Electrochemical Properties of Zn_1–x(Ga_0.5Al_0.5)_xO Nanoparticles for Supercapacitor Applications