Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

Tsai, Chung‐Ying; Lai, Jyong-Di; Feng, Shih‐Wei; Huang, Chien-Jung; Chen, Chien‐Hsun; Yang, Fann-Wei; Wang, Hsiang‐Chen; Tu, Li‐Wei

doi:10.3762/bjnano.8.194

Cited by 12 publications

(6 citation statements)

References 17 publications

(18 reference statements)

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“…The (111)-Cu deposited onto (002)-ZnO thin film. Both cubic Cu2O and wurtzite ZnO t ited similar atomic arrangement of interface due to low lattice mismatch 7.1% [26]. XRD patterns before and after the stacking of p-Cu2O thin film Figure 8.…”

Section: Structural Propertiesmentioning

confidence: 94%

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

et al. 2023

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Metal oxide semiconductor material has great potential to act as window layer in p–n heterojunction solar cell thin film owing to low production cost and significant properties in photovoltaic mechanism. In this work, n-TiO2/ZnO bilayer thin film was effectively constructed by means of sol-gel spin coating technique in an effort to diminish the electron-hole recombination rate from single-layered thin film. Annealing time is one of the important parameters in the fabrication process and was varied to study the impact of annealing treatment towards the thin film characteristics as window layer. It was found that the optimum parameter for the n-TiO2/ZnO bilayer was 500 °C with an annealing time of 2 h. High crystallinity of the n-(101)-TiO2/(002)-ZnO bilayer thin film was obtained, which consists of anatase and a hexagonal wurtzite structure, respectively. Orientation of (002)-ZnO is essential for deposition with the (111) Cu2O-absorbing layer due to a low different lattice mismatch between these two interfaces. The homogenous morphology of n-TiO2/ZnO bilayer was observed with a compact and dense layer. The improvement of transmittance has also been achieved in a range of 60%–80%, which indicated that the incident light can penetrate throughout the thin film directly. In addition, a p-Cu2O absorbing layer was successfully fabricated on top of n-TiO2/ZnO bilayer thin film to form a p-n junction in order to visualize significant electrical rectification properties. The existence of p-Cu2O was confirmed by a (111)-peak orientation and triangular shape in structural and morphological properties, respectively.

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Section: Structural Propertiesmentioning

confidence: 94%

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

et al. 2023

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“…In contrast, the (002)-orientation plane of ZnO displays a pyramid-like structure resembling a hexagonal cylinder, with or without a pyramidal tip. Regarding the (101)-orientation plane of ZnO, the polygon forms a pyramidal tip without the presence of a hexagonal cylinder [40].…”

Section: Optical Properties Of N-tio2/zno Bilayer Thin Filmmentioning

confidence: 99%

The Impact of Spinning Speed on n-TiO2/ZnO Bilayer Thin Film Fabricated through Sol–Gel Spin-Coating Method

Arifin,

Mhd Noor,

Mohamad

et al. 2024

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The spinning speed parameter plays a crucial role in determining the properties of an n-TiO2/ZnO bilayer thin film fabricated using the sol–gel spin-coating technique, especially for solar cell applications. In this study, various spinning speeds were employed on an n-TiO2/ZnO bilayer thin film, and characterizations were conducted, such as morphological, structural, and optical properties. The findings revealed that the optimal conditions for the thin film were achieved at a spinning speed of 3000 rpm. Under this condition, a homogenous and compact surface morphology was observed, with an even distribution of ZnO grains. The successful fabrication of an n-TiO2/ZnO bilayer thin film was confirmed by the presence of characteristic peaks for both TiO2 and ZnO. Obviously, three dominant ZnO orientation peaks, which included (100), (002), and (101) were identified. The prevalence of the (002)-ZnO orientation plane indicated a high-quality structure with excellent crystallinity. In terms of optical properties, the achievement of high transmittance up to 75% resembles the high transparency of the thin film. The optical energy of the n-TiO2/ZnO bilayer thin film is estimated at 3.10 eV. In summary, the spinning speed parameter played a pivotal role in enhancing various properties of the thin film, making it a significant factor in its development for diverse applications.

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“…In most cases, the main reasons for the occurrence of internal strains are changes in the volume of the films during their formation [4], different coefficients of thermal expansion of the material of the film and substrate [5,6], as well as different lattice parameters of the film and substrate [7,8]. The magnitude and signs of mechanical deformations in the films depend on many factors that are related to the methods of applying the films to the substrate and the character of their growth.…”

Section: Introductionmentioning

confidence: 99%

The Modeling of Self-Consistent Electron–Deformation–Diffusion Effects in Thin Films with Lattice Parameter Mismatch

et al. 2023

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In our work, the model of self-consistent electron–deformation–diffusion effects in thin films grown on substrate with the mismatch of lattice parameters of the contacting materials is constructed. The proposed theory self-consistently takes into account the interaction of the elastic field (created by the mismatch of lattice parameters of the film and the substrate, and point defects) with the diffusion processes of point defects and the electron subsystem of semiconductor film. Within the framework of the developed model, the spatial distribution of deformation, concentration of defects, conduction electrons and electric field intensity is investigated, depending on the value of the mismatch, the type of defects, the average concentrations of point defects and conduction electrons. It is established that the coordinate dependence of deformation and the concentration profile of defects of the type of stretching (compression) centers, along the axis of growth of the strained film, have a non-monotonic character with minima (maxima), the positions of which are determined by the average concentration of point defects. It is shown that due to the electron–deformation interaction in film with a lattice parameter mismatch, the spatial redistribution of conduction electrons is observed and n-n+ transitions can occur. Information about the self-consistent spatial redistribution of point defects, electrons and deformation of the crystal lattice in semiconductor materials is necessary for understanding the problems of their stability and degradation of nano-optoelectronic devices operating under conditions of intense irradiation.

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Growth and characterization of textured well-faceted ZnO on planar Si(100), planar Si(111), and textured Si(100) substrates for solar cell applications

Cited by 12 publications

References 17 publications

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

Annealing Treatment on Homogenous n-TiO2/ZnO Bilayer Thin Film Deposition as Window Layer for p-Cu2O-Based Heterostructure Thin Film

The Impact of Spinning Speed on n-TiO2/ZnO Bilayer Thin Film Fabricated through Sol–Gel Spin-Coating Method

The Modeling of Self-Consistent Electron–Deformation–Diffusion Effects in Thin Films with Lattice Parameter Mismatch

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