25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions

Xiao, Xi; Xu, Hao; Li, Xianyao; Hu, Yingtao; Xiong, Kedi; Li, Zhiyong; Chu, Tao; Yu, Yude; Yu, Jinzhong

doi:10.1364/oe.20.002507

Cited by 130 publications

(72 citation statements)

References 31 publications

(10 reference statements)

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“…Mach-Zehnder interferometer (MZI) and ring resonator based silicon modulators exploiting the plasma dispersion effect were extensively optimized over the past few years [3][4][5][6] and play a critical role in silicon transceiver prototypes emerging now [7][8][9]. However, MZI based modulators suffer from a large footprint, typically a few millimeters [6], and ring or disk modulators exhibit a narrow optical bandwidth, making them difficult to control and sensitive to temperature variations or fabrication errors [5].…”

Section: Introductionmentioning

confidence: 99%

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

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161

156

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High performance integrated optical modulators are highly desired for future optical interconnects. The ultra-high bandwidth and broadband operation potentially offered by graphene based electro-absorption modulators has attracted a lot of attention in the photonics community recently. In this work, we theoretically evaluate the true potential of such modulators and illustrate this with experimental results for a silicon integrated graphene optical electro-absorption modulator capable of broadband 10 Gb/s modulation speed. The measured results agree very well with theoretical predictions. A low insertion loss of 3.8 dB at 1580 nm and a low drive voltage of 2.5 V combined with broadband and athermal operation were obtained for a 50 µm-length hybrid graphene-Si device. The peak modulation efficiency of the device is 1.5 dB/V. This robust device is challenging best-in-class Si (Ge) modulators for future chip-level optical interconnects.

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Section: Introductionmentioning

confidence: 99%

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Pantouvaki

Campenhout

et al. 2016

Laser & Photonics Reviews

Self Cite

161

156

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“…The first of such devices was proposed in 2009 by Li et al [44]. Recently there has also been some experimental demonstrations of modulation from interleaved devices as summarised in Table 3 [31,[45][46][47].…”

mentioning

confidence: 99%

Recent breakthroughs in carrier depletion based silicon optical modulators

et al. 2014

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Abstract:The majority of the most successful optical modulators in silicon demonstrated in recent years operate via the plasma dispersion effect and are more specifically based upon free carrier depletion in a silicon rib waveguide. In this work we overview the different types of free carrier depletion type optical modulators in silicon. A summary of some recent example devices for each configuration is then presented together with the performance that they have achieved. Finally an insight into some current research trends involving silicon based optical modulators is provided including integration, operation in the mid-infrared wavelength range and application in short and long haul data transmission links.

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“…High-bandwidth advanced modulation signals can be also realized in silicon microring modulators, which hold the promise to achieve extremely low power consumption due to their micron-meter sizes [33,[76][77][78][79]. The resonant transmission of a microring comes with a dramatic phase change around the resonant wavelength.…”

Section: Coherent Transmittersmentioning

confidence: 99%

Silicon photonic devices and integrated circuits

Dong¹,

Chen²,

et al. 2014

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Silicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full potential of silicon photonics both in the applications and in its technical merits. Additionally it has demonstrated novel and improved high-performance optical devices, and implemented multi-function photonic integrated circuits to fulfill various communication applications. In this paper, we review our silicon photonic programs and main achievements during recent years. For devices, we review highperformance single-drive push-pull silicon Mach-Zehnder modulators, hybrid silicon/III-V lasers and silicon nitrideassisted polarization rotators. For photonic circuits, we review silicon/silicon nitride integration platforms to implement wavelength-division multiplexing receivers and transmitters. In addition, we show silicon photonic circuits are well suited for dual-polarization optical coherent transmitters and receivers, geared for advanced modulation formats. We also discuss various applications in the field of communication which may benefit from implementation in silicon photonics.

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25 Gbit/s silicon microring modulator based on misalignment-tolerant interleaved PN junctions

Cited by 130 publications

References 31 publications

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Broadband 10 Gb/s operation of graphene electro‐absorption modulator on silicon

Recent breakthroughs in carrier depletion based silicon optical modulators

Silicon photonic devices and integrated circuits

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