220GHz f&lt;inf&gt;T&lt;/inf&gt; and 400GHz f&lt;inf&gt;max&lt;/inf&gt; in 40-nm GaN DH-HEMTs with re-grown ohmic

Shinohara, Kazuhiko; Corrion, A.; Regan, D.; Milosavljevic, I.; Brown, David F.; Burnham, Shawn D.; Willadsen, P. J.; Butler, C.; Schmitz, A.; Wheeler, Dana; Fung, A.; Micovic, M.

doi:10.1109/iedm.2010.5703448

Cited by 58 publications

(53 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Although JFoM is more commonly cited, the f max · V B K product may be a more appropriate metric for HEMTs used in power amplifier applications, which based on a peak f max of 230 GHz is 21.8 THz· V for this study. These metrics compare well to recent reports of other vertically scaled, passivated HEMT technologies, such as AlN/GaN HEMTs grown on SiC (JFoM = 9.2 THz·V and f max · V B K = 16.8 THz·V) [15] and Si (JFoM near 10 THz·V and f max ·V B K over 20 THz·V) [16].…”

Section: Resultssupporting

confidence: 78%

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Downey

Meyer

Katzer

et al. 2014

IEEE Electron Device Lett.

View full text Add to dashboard Cite

A high combination of three-terminal breakdown voltage (V BK ) and current gain cutoff frequency (f T ) was achieved with SiN x /InAlN/AlN/GaN metal-insulatorsemiconductor high-electron mobility transistors (MIS-HEMTs). A 1-nm SiN x gate dielectric was deposited ex situ in a molecular beam epitaxy system and used to increase the carrier density of the 2-D electron gas under an ultrathin InAlN/AlN (2.3 nm/1 nm) barrier. Passivated MIS-HEMTs with a gate length of 80 nm exhibited a drain current density greater than 1.1 A/mm, a peak intrinsic transconductance g m,max of 800 mS/mm, and a maximum frequency of oscillation f max of 230 GHz. The combination of f T of 114 GHz and V BK of 95 V provides a Johnson figure of merit of 10.8 THz · V, which is among the highest reported values for fully passivated GaN HEMTs. A peak power-added efficiency of 37.5% with an output power of 1.25 W/mm and an associated gain of 9.7 dB was obtained by load-pull measurements at 40 GHz. Index Terms-Breakdown voltage, GaN, high-electron mobility transistors (HEMTs), InAlN, SiN x .

show abstract

Section: Resultssupporting

confidence: 78%

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

Downey

Meyer

Katzer

et al. 2014

IEEE Electron Device Lett.

View full text Add to dashboard Cite

show abstract

“…GaN HEMT devices have achieved high cutoff frequencies, with recent report results of 220 GHz and 400 GHz [73]. The advent of such high speed GaN transistors has led to the first GaN -band MMIC power amplifiers, with 842 mW reported in a MMIC module at 88 GHz, from HRL Laboratories [74].…”

Section: Solid-state Power Amplifiers For the Thz Regimementioning

confidence: 99%

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Samoska

2011

IEEE Trans. Terahertz Sci. Technol.

233

View full text Add to dashboard Cite

Abstract-We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.

show abstract

“…Current cut-off frequencies of 300 GHz [1] and f MAX of 400 GHz [2] have been achieved in nanoscale gate devices, while a 40 W/mm output power was recorded in power GaN-HEMTs [3]. Several techniques have been adopted to improve the performance of HEMTs based on AlGaN/GaN heterostructure: self aligned gates, back barriers, low resistance ohmic contacts, vertical and gate length scaling.…”

Section: Introductionmentioning

confidence: 99%

Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs

Soligo

Guerra

Ferry

et al. 2012

2012 15th International Workshop on Computational Electronics

View full text Add to dashboard Cite

The effects of access region scaling on the performance of millimeter-wave GaN HEMTs is investigated through nanoscale carrier dynamics description obtained by full band Cellular Monte Carlo simulation. The drain current and transconductance have shown to increase monotonically up to respectively 5500 mA/mm and 1500 mS/mm by symmetrically scaling the source to gate and gate to drain distance from 635 nm to 50 nm. The electric field distribution has been studied for the shorter access regions and it was seen to be still far from the GaN breakdown limit. The access region scaling is found to greatly improve the frequency response of the device as well: from 340 GHz up to 860 GHz. Detailed simulation of the carrier dynamics in the area under the gate showed that these improvements are due to higher transit velocity of electrons at the source end of the gate.

show abstract

220GHz f<inf>T</inf> and 400GHz f<inf>max</inf> in 40-nm GaN DH-HEMTs with re-grown ohmic

Cited by 58 publications

References 2 publications

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

<inline-formula> <tex-math notation="TeX">${\rm SiN}_{x}$ </tex-math></inline-formula>/InAlN/AlN/GaN MIS-HEMTs With 10.8 <inline-formula> <tex-math notation="TeX">${\rm THz}\cdot{\rm V}$ </tex-math></inline-formula> Johnson Figure of Merit

An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Cellular Monte Carlo study lateral scaling impact of on the DC-RF performance of high-power GaN HEMTs

Contact Info

Product

Resources

About