An Overview of Solid-State Integrated Circuit Amplifiers in the Submillimeter-Wave and THz Regime

Bukvic

J. Phys. D: Appl. Phys.

et al. 2016

Abstract. Utilization of graphene covered waveguide inserts to form tunable waveguide resonators is theoretically explained and rigorously investigated by means of full-wave numerical electromagnetic simulations. Instead of using graphene based switching elements, the concept we propose incorporates graphene sheets as parts of a resonator. Electrostatic tuning of the graphene surface conductivity leads to changes in the electromagnetic field boundary conditions at the resonator edges and surfaces, thus producing an effect similar to varying electrical length of a resonator. Presented outline of the theoretical background serves to give phenomenological insight into the resonator behavior, but it can also be used to develop customized software tools for design and optimization of graphene based resonators and filters. Due to the linear dependence of the imaginary part of the graphene surface impedance on frequency, the proposed concept was expected to become effective for frequencies above 100 GHz, which is confirmed by the numerical simulations. Frequency range from 100 GHz up to 1100 GHz, where the rectangular waveguides are used, is considered. Simple, all-graphene based resonators are analyzed first, to assess the achievable tunability and to check the performance throughout the considered frequency range. Graphene-metal combined waveguide resonators are proposed in order to preserve excellent quality factors typical for the type of waveguide discontinuities used. Dependence of resonator properties on key design parameters is studied in detail. Dependence of resonator properties throughout the frequency range of interest is studied using eight different waveguide sections appropriate for different frequency intervals. Proposed resonators are aimed at applications in the submillimeter-wave spectral region, serving as the compact tunable components for the design of bandpass filters and other devices.

“…using dependencies given in (8). For a metal of finite conductivity m σ , and permeability 0 µ , surface impedance of the thin metal sheet can be calculated as…”

Section: Dielectric Slab With and Without Conductive Layermentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Graphene-based waveguide resonators for submillimeter-wave applications

Bukvic

J. Phys. D: Appl. Phys.

et al. 2016

IEICE Electron. Express

“…They are of great interest for high-resolution imaging, environmental sensor, security detection, broadband satellite communication applications [3]. InP-based PHEMTs have shown more excellent performance of high-gain, wide-band, and low noise than the GaAs-based beyond 100 GHz, thus MMICs based on InP PHEMTs have been reported over the world [1,3,4,5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

A novel large-signal model for InP MMIC applications at 110 GHz

Wang

Luo

Zhuo-Bin

et al. 2015

This paper presented the development of a novel large-signal equivalent circuit model for InP-based pseudomorphic high electron mobility transistor (PHEMT) MMIC applications beyond 100 GHz. A new set of I-V functions was built in the large-signal model to depict accurately the measured I-V results of this device. The convergence of the model was good during the HB (harmonic balance) simulation. To verify the feasibility of the large-signal model, a 110 GHz MMIC amplifier based on this large-signal model was designed and fabricated, the on-wafer measured large-signal results, which include Pout, Gain and PAE (Power Add Efficiency), were consistent with the simulated ones at 110 GHz. Thus, this new large-signal model has a great potential for InP MMIC applications beyond 100 GHz.

IEICE Electron. Express

“…Many W-band and D-band even much higher frequency bands MMIC amplifiers have been reported over the world [1,2,3,4,5,6,7,8,9,10,11]. Compared with GaAs and other materials based devices, InP-based PHEMTs have shown the excellent performance of highgain, wide-band, and low noise beyond 100 GHz [3,11]. This paper reported the design, fabrication and on-wafer measurement of a twostage 85-120 GHz MMIC amplifier using our previously designed and improved 70-nm InP-based PHEMTs technology.…”

Section: Introductionmentioning

confidence: 99%

An 85–120 GHz high-gain and wide-band InP MMIC amplifier

Wang

Zhuo-Bin

Liu

et al. 2015

This paper presents the development of an 85-120 GHz highgain and wide-band monolithic millimeter-wave integrated circuit (MMIC) amplifier using our own improved 70-nm InP pseudomorphic high electron mobility transistor (PHEMT) with f t = 247 GHz and f max = 392 GHz. Edgecoupled line is used for DC blocking and radial subs are employed for RF bypass. Shunt RC networks and radial stubs are included in the bias circuitry to maintain amplifier stability. This amplifier is measured on-wafer with a small-signal peak gain of 14.4 dB at 92 GHz and greater than 11.5 dB from 85 to 120 GHz. The 3 dB bandwidth is above 35 GHz with a chip size of 1.6 × 1.1 mm 2 . To our knowledge, this MMIC amplifier has characteristics of much higher-gain per stage, wider-band and smaller chip size than others at the similar frequency band. The excellent results indicate that this MMIC amplifier has a great potential for pre-amplifier or interstage driving amplifiers applications at W-band or D-band.