20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate

Abstract

A GaInAs/InP waveguide-type p–i–n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10−9 is obtained at data rates of 20 and 10 Gbps with input powers of −10 and −13 dBm, respectively.

Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy

“…The ability to bond the III-V layer on top of a pre-processed silicon photonic integrated circuit (PIC) or just a regular integrated circuit (IC) makes this solution particularly attractive for high-performance devices and novel chip schemes such as a 3D integration with different functionality layers while maintaining an appropriate thermal budget. Both, lasers [21][22][23] as well as photodetectors [24][25][26] have been demonstrated using bonding.…”

InP membrane integrated photonics research

“…Structures similar to the membrane laser can be used. Figure 18(a) shows a microscope image of a fabricated membrane photodiode with a lateral diode scheme [99,100]. The structure is basically as same as that of the DR membrane lasers, except for the introduction of a GaInAs bulk absorber instead of the QWs.…”

PEDOT:PSS-mediated semiconductor wafer bonding for built-in middle subcells in multijunction solar cells

“…© 2023 The Japan Society of Applied Physics W afer bonding is a versatile semiconductor fabrication process technology that allows for the stacking and integration of dissimilar, lattice-mismatched materials, and is utilized for the realization of various heterostructured optoelectronic devices. [1][2][3][4][5][6] Conventionally, the interfacial bonding agents, such as oxides, metals, and polymers, have played fundamental roles of mechanical adhesion and/or electrical conductance. We propose the functional bonding concept for the simultaneous realization of bonding formation and optoelectronic function implementation, by employing proper functional materials as the bonding agent, to provide a manufacturing efficacy.…”