2 V 120 nsec 8/16-bit microcontroller with embedded flash EEPROM

Fukumoto, T.; Hirano, Hirohiko; Chaya, S.; Maejima, Tetsuya; Honda, Toshiyuki; Sumi, Tetsuya; Michiyama, Junji; Ariga, R.; Akashi, T.; Watanabe, Susumu

doi:10.1109/cicc.1995.518157

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A 1.4 V 60 MHz access, 0.25 μm embedded flash EEPROM

Kataoka

Fuchigami²,

Nishida³

et al.

Proceedings of the IEEE 1999 Custom Integrated Circuits Conference (Cat. No.99CH36327)

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A 1.4V 60MHz Embedded Flash EEPROM has been de veloped, using a word-line booster circuit, a current comparing sense amplifier and an interleave architecture. A new worcL1ine booster circuit whch consists of a high performance charge pump, a voltage regulator and a voltage switch has supplied a stable voltage to the wordline decoder from the supply voltage of 1.4V. A clock-synchronizedread operation with an interleave architecture has contributed to doubling the maximum operating f q e n c y in the flash EEPROM.

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