The polarization decay process in SrBi2(Ta, Nb)2O9 capacitors and retention
characteristics of a 288-bit ferroelectric memory device fabricated from SrBi2(Ta, Nb)2O9 were
studied. The remanent polarization decay at room temperature showed good linearity when
plotted against logarithmic retention time over a wide range of 10-3–105 s. The distribution of
times to failure of a 288-bit memory was fit to a model having a linear relationship between
log
(log
t
f) and 1/T for the period of infant failures and to the Arrhenius model having the form
log
t
f vs 1/T for the period of random failures, where t
f is the time to failure and T is the
temperature. The activation energy was found to be 0.35 eV for infant failures and 1.15 eV for
random failures. Possible causes for the difference in activation energies are discussed.
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