2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers

Abstract

A new approach in the design of (Al)InGaAsSbGaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature lasing up to 2.7 m. This has been achieved by using quasiternary heavily strained InGaSb(As) QW's inside a broad-waveguide SCH laser structure. The QW compositions are chosen in the region outside the miscibility gap and, as a consequence, do not suffer from clustering and composition inhomogeneity normally found with quaternary InGaAsSb compounds of 2.3-2.7-m spectral range. Very low threshold current density (300 A/cm 2 ) and high CW output powers (>100 mW) were obtained from devices operating in the 2.3-2.6-m wavelength range.Index Terms-Broad-waveguide separate confinement quantum-well laser structure, continuous-wave operation, heavily strained quantum well, mid-infrared AlGaAsSb-InGaAsSb diode lasers.

Thermal conductivity of AlAs0.07Sb0.93 and Al0.9Ga0.1As0.07Sb0.93 alloys and (AlAs)1/(AlSb)11 digital-alloy superlattices

“…[1][2][3][4][5][6][7][8] Besides the binaries GaSb, InAs, and AlSb, this family includes a number of ternary (Ga 1Ϫx In x Sb, AlAs x Sb 1Ϫx , etc.͒ and quaternary (Ga 1Ϫx In x As y Sb 1Ϫy , Al x Ga 1Ϫx As y Sb 1Ϫy , etc.͒ random alloys, 9 as well as superlattices ͑e.g., InAs/ AlSb, InAs/Ga 1Ϫx In x Sb) and digital alloys ͑e.g., Ga 1Ϫx In x As/Ga 1Ϫx In x Sb, AlAs/AlSb͒ that provide numerous additional opportunities for engineering of the band structures and electronic wave functions.…”

Carrier recombination mechanisms in mid‐infrared GaInAsSb quantum well lasers

“…To date, GaInAsSb Quantum Well (QW) lasers grown on GaSb substrates have exhibited the most promising properties in the 2-3 µm spectral range [1]. Low threshold, high power lasers operating continuous wave (CW) at room temperature (RT) have been realised in recent years, as interest in this material system has grown [2]. CW threshold current densities of 34 A cm -2 per QW for a device with λ ~ 2.38 µm and 58 A cm -2 per QW for a device emitting at 2.24 µm have been recorded at room temperature [3,4] and output powers of over 500 mW have been achieved with the application of anti-reflection coatings [5,6].…”

Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

“…Significant progress has been achieved in technology of type-I GaSb-based quantum well (QW) diode lasers. Watt class continuous wave (CW) output power levels were obtained from single laser emitters in spectral region from 2.3 to 2.8 m at room temperature [1]- [7]. Recently, devices operating near 3 m at room temperature with more than 100 mW of CW output power were reported [8].…”