2.2 eV Luminescence in GaN

Abstract

The yellow Luminescence in GaN centered at 2.2 eV has been studied in various epitaxial layers grown by MOVPE on sapphire and by the sandwich sublimation methode on 6H-SiC substrates. The photoluminescence and optically detected magnetic resonance results can be consistently explained by a recombination model involving shallow donors and deep donors.

Properties of the regulatory subunit of cAMP‐dependent protein kinase type II from human brain

“…The plot of C-binding assays carried out with the pig brain RII and C subunits exhibited a holoenzyme formation with an apparent I~ --6.6 + 1.1 nM. The same results were observed previously for C subunit catalysis at similar C concentrations [15,16]. Human and bovine RII subunits possessed less affinity towards the pig C subunit, their K0 being equal to 10.6 ± 1,6 nM and 12.9 ± 3.5 nM, respectively.…”

Avalanche Breakdown Luminescence of InGaN/AlGaN/GaN Heterostructures

“…The maxima in the range of 2.6◊2.8 eV correspond to the maxima of injection luminescence spectra. The broad maxima in the range 2.2◊2.3 eV correspond to the well known "yellow band" in n-GaN connected with donor-acceptor pairs and/or double donor radiative recombination [12]. The charged impurity distribution in the lower doped p-type side of the structure was determined from dynamical capacitance measurements (see the method in [11]).…”