1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb&lt;inf&gt;2&lt;/inf&gt;Te&lt;inf&gt;3&lt;/inf&gt; super-lattice films

The interfacial phase change memory (iPCM) based on a GeTe/Sb 2 Te 3 superlattice is one of the candidates for future storage class memories. However, the atomic structures of the high and low resistance states (HRS/LRS) remain unclear and the resistive switching mechanism is still under debate. Clarifying the switching mechanism is essential for developing further high-reliability and low-power-consumption iPCM. We propose, on the basis of the results of first-principles molecular dynamics simulations, a mechanism for resistive switching, and describe the atomic structures of the high and low resistance states of iPCM for unipolar switching. Our simulations indicated that switching from HRS to LRS occurs with Joule heating only, while that from LRS to HRS occurs with both hole injection and Joule heating.

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“…[14][15][16] Thus, the GeTe layers are sandwiched between thicker Sb 2 Te 3 layer than the primitive cell. Table I and Fig.…”

Section: Simulation Methods and Modelmentioning

confidence: 99%

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

Shirakawa¹,

Araidai²,

Shiraishi³

2018

Jpn. J. Appl. Phys.

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“…2) Solid-to-Solid Phase Transition: A new kind of nonthermal, but charge-injection-driven phase change [43] in the so-called topological RAM (TRAM) [44] has been claimed recently (Fig. 10).…”

Section: E New Insights and Developmentsmentioning

confidence: 99%

“…Schematic of topological switching between crystalline LRS to crystalline LRS in GeTe/Sb 2 Te 5 superlattice PCM materials, by charge-injection-driven movement of the Ge atoms (reproduced with permission from[44]). …”

mentioning

confidence: 99%

Phase-Change and Redox-Based Resistive Switching Memories

2015

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Resistive memories are a collection of physico-chemical approaches where the resistance of the device is programmed and is quite nonvolatile. This paper reviews the current understanding and the future outlook, particularly toward 3-D integration, of such phase-change and electrochemical-change-based structures.ABSTRACT | This paper addresses the two main resistive switching (RS) memory technologies: phase-change memory (PCM) and redox-based resistive random access memory (ReRAM). It will review the basic concepts, the initial promises, and current state of the art, with focus on possible scaling pathways for low-power operation and dense, true 3-D memory. Recent physical insights and new potential concepts will be discussed.

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“…In addition, stable formation of the SL structure was made possible with a 5-nm-thick Sb 2 Te 3 layer as the SL bottom layer on a substrate [10]. As a result, the structure of the GeTe/Sb 2 Te 3 SL was determined to be the structure with the 8-cycle GeTe/Sb 2 Te 3 periodic unit, [GeTe = 1 nm/ Sb 2 Te 3 = 4 nm] 8 , with the 5-nm-thick Sb 2 Te 3 bottom layer.…”

Section: A Physical Vapor Depositionmentioning

confidence: 99%

“…During the dry etching process, deposits on the sidewall formed as a byproduct, which increased the leakage current of the memory cell [10]. The deposits could be removed with diluted hydrogen fluoride (DHF) wet-etching.…”

Section: B Etchingmentioning

confidence: 99%

Fabrication of topological-switching RAM (TRAM)

Takaura

Ohyanagi

Tai

et al. 2014

2014 14th Annual Non-Volatile Memory Technology Symposium (NVMTS)

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The fabrication of topological-switching randomaccess memory (TRAM), a new type of phase change memory, was investigated. The deposition and etching process technologies of a GeTe/Sb 2 Te 3 superlattice memory cell were developed and micro test structures of TRAM were fabricated. Analysis of the fabricated structures revealed that the electrical properties of TRAM were different from those of conventional phase change memory and the reset voltage of TRAM, 0.6 V, was less than that of PRAM, 1 V. The non-melting behaviors of resistance change in TRAM were clarified via thermal-conductivity measurements and device simulation.

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1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb<inf>2</inf>Te<inf>3</inf> super-lattice films

Cited by 11 publications

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First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

Phase-Change and Redox-Based Resistive Switching Memories

Fabrication of topological-switching RAM (TRAM)

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1T-1R pillar-type topological-switching random access memory (TRAM) and data retention of GeTe/Sb<inf>2</inf>Te<inf>3</inf> super-lattice films

Cited by 11 publications

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First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3superlattice

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb2Te3superlattice

Phase-Change and Redox-Based Resistive Switching Memories

Fabrication of topological-switching RAM (TRAM)

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Product

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First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice

First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb₂Te₃superlattice