170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

Testa, Paolo Valerio; Belfiore, Guido; Fritsche, David; Carta, Corrado; Ellinger, Frank

doi:10.1109/csics.2014.6978523

Cited by 21 publications

(10 citation statements)

References 20 publications

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“…High isolation, high output resistance and low Miller effect are the main advantages of cascode gain elements into distributed amplifiers [1][2][3][4]. These features simplify the analysis of the circuit and improve its performance increasing the gain and the maximum frequency of operation [1][2][3][4]. The input capacitances of the gain cells (Cin) are one of the main contributors to the 3 dB upper frequency.…”

Section: IImentioning

confidence: 99%

“…To reduce Cin, the 125 fF capacitors Cb have been placed in series to the bases of transistors Qo exploiting the capacitive division technique [1]. Inductive peaking has been used in the past to compensate the high frequency losses by peaking the gain cells transconductances [4], [8], enhancing the TWA bandwidth. The approach is employed here for the first time to enhance the performances of a CSSDA.…”

Section: IImentioning

confidence: 99%

“…The gain elements transfer and amplify the signal travelling within the input line into the output line with different phase paths; a suitable design of the system ensures the signals combine coherently at the amplifier output. In the recent past, several demonstrations in different fabrication processes have been published [1][2][3][4]. The main drawbacks of TWAs are the large area and power consumption both arising from the presence of several gain cells.…”

Section: Introductionmentioning

confidence: 99%

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180 GHz low-power bandwidth-enhanced BiCMOS cascaded single-stage distributed amplifier

Testa

Carta

Ellinger

2015

2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON)

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This paper presents a four-stage cascaded single stage distributed amplifier (CSSDA) for wideband and low power applications implemented in a 0.13 11m SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). A 3 dB upper frequency of 180 GHz, a bandwidth of 130 GHz, and a gain of 9.5 dB are measured for the fabricated CSSDA. The circuit requires a chip area of 0.28 mm 2 and only 19.5 mW of dc power consumption. To enhance the amplifier gain and bandwidth without increasing the dissipated power, innovative peaking techniques have been employed. Compared against the state of the art, the presented design solution offers the lowest power consumption and the smallest occupied area, without sacrificing excessively speed, gain and gain-bandwidth product.

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Section: IImentioning

confidence: 99%

Section: IImentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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180 GHz low-power bandwidth-enhanced BiCMOS cascaded single-stage distributed amplifier

Testa

Carta

Ellinger

2015

2015 IEEE 16th Annual Wireless and Microwave Technology Conference (WAMICON)

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“…With respect to ultra-wideband LNDA, several publications can be found in the literature with bandwidths larger than the octave range: SiGe HBT [9], GaAs mHEMT [10], InP HBT [11], and CMOS [12]. Several challenges exist in designing such ultra-wideband amplifiers, such as finding suitable topologies to achieve uniform forward gain response for the full band and a low-noise figure (NF) over this bandwidth, simultaneously.…”

Section: Introductionmentioning

confidence: 99%

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

Shivan

Kaule

Hossain

et al. 2019

Int. J. Microw. Wireless Technol.

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This paper reports on an ultra-wideband low-noise distributed amplifier (LNDA) in a transferred-substrate InP double heterojunction bipolar transistor (DHBT) technology which exhibits a uniform low-noise characteristic over a large frequency range. To obtain very high bandwidth, a distributed architecture has been chosen with cascode unit gain cells. Each unit cell consists of two cascode-connected transistors with 500 nm emitter length and ft/fmax of ~360/492 GHz, respectively. Due to optimum line-impedance matching, low common-base transistor capacitance, and low collector-current operation, the circuit exhibits a low-noise figure (NF) over a broad frequency range. A 3-dB bandwidth from 40 to 185 GHz is measured, with an NF of 8 dB within the frequency range between 75 and 105 GHz. Moreover, this circuit demonstrates the widest 3-dB bandwidth operation among all reported single-stage amplifiers with a cascode configuration. Additionally, this work has proposed that the noise sources of the InP DHBTs are largely uncorrelated. As a result, a reliable prediction can be done for the NF of ultra-wideband circuits beyond the frequency range of the measurement equipment.

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“…Distributed amplifiers (DAs) provide an effective approach to extend the bandwidth and therefore are widely used in the design of ultra‐wideband systems. With the cutoff frequency beyond 100 GHz, CMOS technology makes itself more competitive than other advanced process technologies such as GaAs PHEMT technology and SiGe BiCMOS technology because of its much lower price for mass production. However, one major deficiency of the most reported DAs is their low output power and efficiency, which impedes them to be integrated for power amplifiers (PAs).…”

Section: Introductionmentioning

confidence: 99%

A nonuniform distributed power amplifier in 0.18-mm CMOS technology

Zhang

et al. 2017

Microw. Opt. Technol. Lett.

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A nonuniform distributed power amplifier (DPA) is designed and implemented in a 0.18 μm CMOS technology. To achieve high output power and efficiency in the wide frequency band, the impedance matching of T‐type networks is analyzed and the tapered on‐chip inductors of the output artificial transmission lines are designed. Non‐uniform gain cells together with the tapered on‐chip inductors are used to improve the output power while maintaining the good input and output impedance matchings. The chip size of the DPA is only 1.16 × 0.57 mm2 including testing pads. The proposed DPA achieves 8.7 dB average associated gain from 1 to 19 GHz. The output power at 1‐dB output compression point (OP1dB) is more than 7.6 dBm and the best power‐added efficiency (PAE) is 7.4% in the frequency band of 1–18 GHz. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1416–1420, 2017

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170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

Cited by 21 publications

References 20 publications

180 GHz low-power bandwidth-enhanced BiCMOS cascaded single-stage distributed amplifier

180 GHz low-power bandwidth-enhanced BiCMOS cascaded single-stage distributed amplifier

Design and modeling of an ultra-wideband low-noise distributed amplifier in InP DHBT technology

A nonuniform distributed power amplifier in 0.18-mm CMOS technology

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