Abstract:This paper presents a four-stage cascaded single stage distributed amplifier (CSSDA) for wideband and low power applications implemented in a 0.13 11m SiGe BiCMOS technology (ft = 300 GHz, fmax = 500 GHz). A 3 dB upper frequency of 180 GHz, a bandwidth of 130 GHz, and a gain of 9.5 dB are measured for the fabricated CSSDA. The circuit requires a chip area of 0.28 mm 2 and only 19.5 mW of dc power consumption. To enhance the amplifier gain and bandwidth without increasing the dissipated power, innovative peakin… Show more
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