250 GHz SiGe-BiCMOS Cascaded Single-Stage Distributed Amplifier

Testa, Paolo Valerio; Paulo, Robert; Carta, Corrado; Ellinger, Frank

doi:10.1109/csics.2015.7314459

Cited by 18 publications

(3 citation statements)

References 10 publications

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“…Digital Object Identifier 10.1109/TMTT.2024.3368147 proposed in 1936 [5]. Since then, DAs have been fabricated by various technologies, such as indium phosphide (InP) doubleheterojunction bipolar transistor (DHBT)s [6], [7], [8], [9], [10], [11], [12], InP HEMTs [13], [14], SiGe BiCMOS [15], [16], [17], and CMOS [18], [19]. The bandwidth of a DA increases as the maximum oscillation frequency ( f max ) of the technology increases.…”

Section: Introductionmentioning

confidence: 99%

Over 200-GHz-Bandwidth InP DHBT Baseband Amplifier ICs and Ultrabroadband Modules With 1-/0.8-mm Coaxial Connectors

Jyo,

Nagatani,

Wakita

et al. 2024

IEEE Trans. Microwave Theory Techn.

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Wideband baseband amplifier ICs were designed and fabricated in in-house 250-nm indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology for the emerging needs of over 100-150-GHz bandwidth applications. We propose combining an RC degeneration (RCD) circuit and a cascode stage peaking (CSP) circuit to achieve a broadband peaking characteristic and a wide bandwidth. The fabricated amplifier IC achieved a bandwidth of over 200 GHz. To use the amplifier ICs in practical applications, we packaged the amplifier ICs as amplifier modules with 1-mm coaxial connectors as well as 0.8-mm coaxial connectors. The amplifier ICs were mounted onto quartz glass-based module substrates by flip-chip bonding to avoid large reflection and loss. Ground blocks (GBs) were used at the connection part between the module substrates and the coaxial connectors to suppress radiation loss. The fabricated amplifier module with 1-mm coaxial connectors achieved a 7.3-dB gain with a bandwidth over 130 GHz. The fabricated amplifier module with 0.8-mm coaxial connectors achieved an 8.3-dB gain with a 165-GHz bandwidth, which is the widest ever reported thus far.

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Section: Introductionmentioning

confidence: 99%

Over 200-GHz-Bandwidth InP DHBT Baseband Amplifier ICs and Ultrabroadband Modules With 1-/0.8-mm Coaxial Connectors

Jyo,

Nagatani,

Wakita

et al. 2024

IEEE Trans. Microwave Theory Techn.

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“…These active guiding structures are capable of signal amplification from DC up to their inductance-capacitance resonance frequency, called Bragg frequency. Distributed amplification techniques demonstrated broadband amplification up and above half of the process f max [11], [12], [13], [14], [15], [16]. Finally, with the amplifier being the basic block of transceivers, mixers and other key system parts can be derived from it.…”

Section: Introductionmentioning

confidence: 99%

“…Finally, with the amplifier being the basic block of transceivers, mixers and other key system parts can be derived from it. The receiver front-end presented in this work makes use of a cascaded single-stage distributed amplifier (CSSDA) [11], [17], [18], [19] optimized for low noise as the first stage of the receiver chain. A single-balanced mixer, with a transconductance stage based on distributed-amplifier techniques and inductive peaking, is then used for the frequency translation of the received signal.…”

Section: Introductionmentioning

confidence: 99%

A 130 nm-SiGe-BiCMOS Low-Power Receiver Based on Distributed Amplifier Techniques for Broadband Applications From 140 GHz to 200 GHz

Testa

Riess

Carta

et al. 2021

IEEE Open J. Circuits Syst.

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This work presents a direct-conversion receiver for G-band applications formed by a cascaded single-stage distributed amplifier optimized for low noise, a single-balanced active mixer with inductive peaking and broadband RF matching, and a local oscillator (LO) driver. The receiver is optimized for reduced DC and LO power consumption, while practical levels of linearity and noise are retained. Prototypes of the complete receiver and of the stand-alone mixer are implemented in 0.62 mm 2 and 0.39 mm 2 of a 130 nm SiGe BiCMOS technology with 450 GHz maximum-oscillation frequency. The measured receiver saturated gain in LO compression is 17 dB with a 6 dB band of 60 GHz and a 3 dB band of 30 GHz, while the input power which compresses the gain by 1 dB (P in1dB ) is −35 dBm. The simulated receiver double-sideband noise figure is 11 dB. Finally, the circuit requires an LO power of −17 dBm at 170 GHz and a DC power of 98 mW. The measured gain of the mixer is −13 dB with a 3 dB band of 70 GHz. The component P in1dB is −20 dBm for −18 dBm LO power and 53 mW DC power. These circuits offer one of the largest operation bandwidth together with one of the lowest DC and LO power consumption against the state of the art.

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