170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

Testa, Paolo Valerio; Belfiore, Guido; Paulo, Robert; Carta, Corrado; Ellinger, Frank

doi:10.1109/jssc.2015.2444878

Cited by 57 publications

(10 citation statements)

References 19 publications

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“…This complex input nature of HBTs generally results in worse termination mismatch and higher input reflection with additional stages [9], [24]. Furthermore, the gentle frequency response roll-off of the single stage lowpass filters that make up the input and output ATLs of the SSDA is easily compensated for, using available attenuation compensation and bandwidth extension techniques, such as those presented in [24]- [27].…”

Section: Merit Of the Ssda And The M-ssda Formentioning

confidence: 99%

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Odedeyi

Giannakopoulos

Zirath

et al. 2020

IEEE Trans. Circuits Syst. I

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This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1 dB average gain and 200 GHz bandwidth; and the world's first M-SSDA, which has a 12 dB average gain and 170 GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250 nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date.

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Section: Merit Of the Ssda And The M-ssda Formentioning

confidence: 99%

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

Odedeyi

Giannakopoulos

Zirath

et al. 2020

IEEE Trans. Circuits Syst. I

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“…Another technique developed to reduce the loading effect of the transistors input impedance is using a common-source amplifier with RC degeneration [Fig. 5(b)] as the gain stage [25]- [31]. The input impedance of the amplifier is derived as a series resistance and capacitance.…”

Section: A Da Using Improved Gain Stagesmentioning

confidence: 99%

“…In [31], a DA with 170-GHz bandwidth and 10-dB gain is presented using a 130-nm SiGe BiCMOS technology. The frequency behavior of gain stage transconductance G m is shaped to compensate for loss of the input line at high frequencies.…”

Section: Sige Bicmos Dasmentioning

confidence: 99%

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The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

2018

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I. INTRODUCTION B ROADBAND amplification of signals is desirable in many applications such as high-speed data communications, high-resolution imaging systems, optoelectronics and instrumentation systems. Wide bandwidth is one of the prominent factors to be considered in designing such a system since it determines ability of the system for transferring highdata-rate information, transmitting/receiving short pulses, or processing wideband signals. Designing broadband amplifiers has always been challenging. The ever-increasing demand for higher data-rates and low energy consumption in next generation communication systems further complicates the design of broadband amplifiers. Distributed amplifiers (DA), also known as travelling-wave amplifiers (TWA), are one of the most popular broadband amplifier architectures. The DA architecture was originally patented by Percival in 1936 [1] and later elaborated by Ginzton in 1948 [2]. The early DAs were implemented using vacuum tube technology. One of the first vacuum tube DAs fabricated in 1950 is shown in Fig. 1. The amplifier included three type 807 tubes and 482-Ω plate and grid lines. The amplifier achieved a gain of 11 dB, bandwidth of 100 Hz to 300 MHz, and a typical output power of 15 W [3]. The first Monolithic Microwave Integrated Circuit (MMIC) DA was demonstrated by Ayasli in 1982 [4] using a Gallium Arsenide (GaAs) MESFET technology. The amplifier, shown in Fig. 2, included four transistors with 1-µm gate length and 50-Ω input and output lines. It achieved 9-dB gain and 1-13 GHz bandwidth. GaAs remained the main technology for design of DAs until the inception of the first Indium Phosphide (InP) DA in 1990 [5] with an impressive bandwidth of 5-100 GHz. GaAs and InP semiconductor technologies have been predominantly employed in implementation of DAs. These technologies provide superior performance resulting from their high electron mobility, high saturated electron velocity, high breakdown voltage, and high-resistivity substrate. The later contributes to availability of low-loss integrated passive elements. The market demands for low cost, small size, and low power consumption of electronic systems has motivated researchers to develop techniques to implement distributed amplifiers using mainstream CMOS technologies. The first integrated CMOS DA was presented by Kleveland in 1999 [6]. Recently,

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“…Distributed amplifiers (DAs) provide an effective approach to extend the bandwidth and therefore are widely used in the design of ultra‐wideband systems. With the cutoff frequency beyond 100 GHz, CMOS technology makes itself more competitive than other advanced process technologies such as GaAs PHEMT technology and SiGe BiCMOS technology because of its much lower price for mass production. However, one major deficiency of the most reported DAs is their low output power and efficiency, which impedes them to be integrated for power amplifiers (PAs).…”

Section: Introductionmentioning

confidence: 99%

A nonuniform distributed power amplifier in 0.18-mm CMOS technology

Zhang

et al. 2017

Microw. Opt. Technol. Lett.

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A nonuniform distributed power amplifier (DPA) is designed and implemented in a 0.18 μm CMOS technology. To achieve high output power and efficiency in the wide frequency band, the impedance matching of T‐type networks is analyzed and the tapered on‐chip inductors of the output artificial transmission lines are designed. Non‐uniform gain cells together with the tapered on‐chip inductors are used to improve the output power while maintaining the good input and output impedance matchings. The chip size of the DPA is only 1.16 × 0.57 mm2 including testing pads. The proposed DPA achieves 8.7 dB average associated gain from 1 to 19 GHz. The output power at 1‐dB output compression point (OP1dB) is more than 7.6 dBm and the best power‐added efficiency (PAE) is 7.4% in the frequency band of 1–18 GHz. © 2017 Wiley Periodicals, Inc. Microwave Opt Technol Lett 59:1416–1420, 2017

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170 GHz SiGe-BiCMOS Loss-Compensated Distributed Amplifier

Cited by 57 publications

References 19 publications

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification

The (R)evolution of Distributed Amplifiers: From Vacuum Tubes to Modern CMOS and GaN ICs

A nonuniform distributed power amplifier in 0.18-mm CMOS technology

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