This paper proposes, for the first time, a transmission line synthesis approach to extending the bandwidth of lightemitting diodes (LEDs) in the context of high capacity visible light communications links. As opposed to the more traditional pre-distortion, amplitude equalisation or driver circuitry based approaches, the extension in bandwidth is achieved by incorporating the LED diffusion capacitance into a pseudo-artificial transmission line (p-ATL) cell with significantly improved transmission and cutoff properties. With the proposed technique, we show the possibility of achieving close to 400% improvement in bandwidth with studies based on a verified LED equivalent model. It is envisaged that the proposed approach will enable bespoke driver circuits based on the individual characteristics of LEDs, while combination with existing bandwidth extension schemes can lead to further improvement.
Abstract-This work reports a novel approach to extending the bandwidth of single stage distributed amplifiers (SSDAs). The three-stepped technique involves scaling down the inductance on the input artificial transmission line (ATL); creating a high frequency resonance peak by the addition of shunt capacitance on the input ATL; and compensating for the resulting increased reflection with adapted negative resistance attenuation compensation techniques. Compared with the inductive-peaked cascode technique applied in the SSDA which currently has the highest reported bandwidth, simulation results, based on full foundry transistor models, predict up to 30% improvement in gainbandwidth (GBW) performance for the same active device at the same bias. In addition, the reduction in the length of the input ATL effectively reduces transmission line losses, thereby improving the overall gain performance.
This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1 dB average gain and 200 GHz bandwidth; and the world's first M-SSDA, which has a 12 dB average gain and 170 GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250 nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date.
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