160-GHz Passively Mode-Locked AlGaInAs 1.55-$\mu$m Strained Quantum-Well Compound Cavity Laser

80-GHz AlGaInAs/InP 1.55µm colliding-pulse mode-locked laser with low divergence angle and timing jitter

“…1b). The laser fabrication process was similar to that described in [13], except here, hydrogen silsesquioxane (HSQ) was used in the planarization of the ridge waveguide [15] (see Fig. 1a).…”

“…In this letter we further demonstrate an 80-GHz AlGaInAs/InP λ ∼ 1.55 µm MLL from a FRL structure in a colliding-pulse configuration, which has the potential to meet both of these criteria mentioned above, i.e., low divergence angle, and low timing jitter. The use of the FRL eliminates the need for overgrowth and the stringent fabrication tolerance requirements, so lasers can be fabricated as readily as conventional ridge waveguide devices using a process similar to that described in [13].…”

AlGaInAs mode-locked lasers for ultrashort pulse harmonic mode locking

“…The samples used in the experiment were based on commercial AlInGaAs 1550 nm laser diode (LD) wafers [5] [6]. Active region consisted of 5 6-nm-thick quantum wells separated by 10-nm-thick barriers, where both wells and barriers are of Al-quaternary material.…”

80 GHz AlGaInAs/InP colliding-pulse mode-locked laser with high pulse power

“…7) Among these, the CPM scheme offers many advantages over other types of harmonic ML because the CPM scheme provides a relatively stable ML operation, can be made with simple fabrication processes, and has less stringent cleaving tolerances. [7][8][9] SMLLs should also deliver a high pulse power with narrow temporal width pulses to meet the requirements of applications. There are several approaches to increase the pulse power of SMLLs.…”