15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Salemi, Arash; Elahipanah, Hossein; Jacobs, Keijo; Zetterling, Carl-Mikael; Östling, Mikael

doi:10.1109/led.2017.2774139

Cited by 38 publications

(19 citation statements)

References 27 publications

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“…Bu cm² at 854 A/cm 2 . The current gain value can be considered to be low as compared to literature [10]- [16]. The reasons for this are both technological.…”

Section: Static Characteristicsmentioning

confidence: 97%

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Asllani

Morel

Bevilacqua

et al. 2020

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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Static, switching and short-circuit characterization of a 10 kV-class Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) is reported. The 2.4 mm² SiC BJT show good static and switching behavior. The current gain is low compared to literature, but several issues have been identified and can be improved. For the first time, the Short-circuit ruggedness of a 10 kV SiC-BJT is reported. These tests show outstanding performance with at least 16 µs withstand time. Several samples have been brought to failure and revealed an outstanding 52.1 J/cm 2 of short-circuit critical energy at 32% of breakdown voltage. The failure seems to happen on the top face metallization since the devices failed in blocked mode and the base-emitter terminals shorted. The SiC BJT handles without failing at least 3 times the critical Short-circuit energy of the commercial SiC MOSFETs. In addition, switching performance is much better than that of Si-IGBTs.

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“…Bu cm² at 854 A/cm 2 . The current gain value can be considered to be low as compared to literature [10]- [16]. The reasons for this are both technological.…”

Section: Static Characteristicsmentioning

confidence: 97%

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Asllani

Morel

Bevilacqua

et al. 2020

2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)

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“…Research-level SiC device prototypes with blocking voltage capabilities above 15 kV have been demonstrated using floating field/guard rings (FFR/FGR) [6], [13]- [15], multi-zone (MZ)-JTE [16]- [18], optimized implantationfree (O)-JTE [19], negative bevel based (NB)-JTE [20], [21], and space-modulated (SM)-JTE [7]- [10], [22] termination structures, offering each design concept with its specific set of advantages and disadvantages. The floating guard-ring structure is processed without additional manufacturing steps but requires more than 100 rings for devices with > 10 kV blocking voltage capability [23], [24].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

“…In contrast, multi-zone JTE structures have a wider dose window but encounter high electric field peaks in the border between the zones [27], [28]. Similar field peaks are also visible in the transition points caused by vertical etched steps [19], [29], [30], [48], but they may be relaxed using a low-angle bevel step approach [29]. Note, that JTE structures formed by p-type epitaxial growth (e.g., anode doping) and step etch JTE, minimize crystal defects due to lack of ion implantation processing [48].…”

Section: Assessment Of Junction Termination Extension Structures For Ultrahigh-voltage Silicon Carbidementioning

confidence: 99%

“…The majority of the JTE structures strives towards the ideal effective charge by employing various patterns of ion implanted guard rings [11], [26], JTE zones [26], [27], or combinations of the two [7], [25], [26], [33], [34]. The same applies for different beveled termination structures [20], [21], [31], [32] and etched-step (ES)-JTE structures [19], [29], [30], [37], [43]- [45], [48].…”

Section: B Single-zone Negative-bevel Jte and Single-zone Etched-step Jte Designs For Ultrahigh-voltage Devicesmentioning

confidence: 99%

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Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Johannesson

Nawaz

Nee

2021

IEEE Open J. Power Electron.

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The junction termination extension (JTE) structures for ultrahigh-voltage (UHV) devices consumes a considerable part of the semiconductor chip area. The JTE area is closely related to chip performance, process yield and ultimately device cost. The JTE lengths for UHV devices (i.e., > 30 kV) are still unknown, not visible in the scientific literature and have therefore been predicted in this study by means of two-dimensional numerical simulations using the Sentaurus based technology computeraided design (TCAD) tool. A previously reported space-modulated, two-zone JTE (SM-JTE) structure has been used as an input to set up a suitable TCAD model, which is further scaled to JTE lengths required for 40 kV class and 50 kV class SiC PiN diodes. The simulation results indicate that the SM-JTE requires an 1800 µm one-sided JTE length with 27 guard rings for a 40 kV theoretical PiN diode and 2700 µm with 36 guard rings for a 50 kV device, resulting in breakdown voltages of 41.4 kV and 51.7 kV, respectively. Moreover, the design considerations of different JTE categories are discussed with focus on the adaptability of the termination structures in ultrahigh-voltage devices, e.g., VB > 30 kV, which results in a comparison of the SM-JTE structure with other high-voltage JTE designs.

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“…Conductivity modulation effects make PiN bipolar devices have higher conductance characteristics, which shows that PiN rectifiers have lower on-resistance than 10 kV-class unipolar SiC diodes (>100 mΩ·cm 2 ) in many intensive studies [10,11]. In these studies, the multi-zone junction termination extension (JTE) technique-involving space-modulated JTE, multiple ring modulated JTE, mesa-etched JTE, and Hybrid JTE-is the typical edge termination technology for achieving a high blocking efficiency [12][13][14][15]. However, JTE structure suffers from a narrow optimum implantation dose window and SiC surface charge, which leads to breakdown voltage degradation and reliability problems.…”

Section: Introductionmentioning

confidence: 99%

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

Liu

Yang

Wang³

et al. 2019

Materials

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In this paper, a 13.4 kV/55 A 4H-silicon carbide (SiC) PiN diode with a better trade-off between blocking voltage, differential on-resistance, and technological process complexity has been successfully developed. A multiple zone gradient modulation field limiting ring (MGM-FLR) for extremely high-power handling applications was applied and investigated. The reverse blocking voltage of 13.4 kV, close to 95% of the theoretical value of parallel plane breakdown voltage, was obtained at a leakage current of 10 µA for a 100 µm thick, lightly doped, 5 × 10 14 cm −3 n-type SiC epitaxial layer. Meanwhile, a fairly low differential on-resistance of 2.5 mΩ·cm 2 at 55 A forward current (4.1 mΩ·cm 2 at a current density of 100 A/cm 2 ) was calculated for the fabricated SiC PiN with 0.1 cm 2 active area. The highest Baliga's figure-of-merit (BFOM) of 72 GW/cm 2 was obtained for the fabricated SiC PiN diode. Additionally, the dependence of the breakdown voltage on transition region width, number of rings in each zone, as well as the junction-to-ring spacing of SiC PiN diodes is also discussed. Our findings indicate that this proposed device structure is one potential candidate for an ultra-high voltage power system, and it represents an option to maximize power density and reduce system complexity.

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15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain

Cited by 38 publications

References 27 publications

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Demonstration of the Short-circuit Ruggedness of a 10 kV Silicon Carbide Bipolar Junction Transistor

Assessment of Junction Termination Extension Structures For Ultrahigh-Voltage Silicon Carbide Pin-Diodes; A Simulation Study

Theoretical and Experimental Study of 13.4 kV/55 A SiC PiN Diodes with an Improved Trade-Off between Blocking Voltage and Differential On-Resistance

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