144 °C operation of 1.3 μm InGaAsP vertical cavity lasers on GaAs substrates

Dudley, J.J.; Ishikawa, Masayuki; Babic, D.I.; Miller, B. I.; Mirin, Richard P.; Jiang, Wanquan; Bowers, John E.; Hu, Evelyn L.

doi:10.1063/1.107972

Cited by 62 publications

(9 citation statements)

References 9 publications

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“…Dudley et al 1992). However, their manufacturing is too expensive and troublesome to become lasing carrier sources in the mass optical-fibre communication.…”

Section: Introductionmentioning

confidence: 93%

Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

Sarzała

Nakwaski

2006

Opt Quant Electron

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Structure optimisation of a possible 1.5-µm GaAs-based vertical-cavity surface-emitting laser diode with the GaInNAsSb/GaNAs quantum-well active region r o b e r t p . s a r z a ł a a n d w ł o d z i m i e r z n a k wa s k Abstract. Structure optimisation of the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) verticalcavity surface-emitting diode lasers (VCSELs) has been carried out using the comprehensive threedimensional self-consistent physical model of their room-temperature (RT) continuous-wave (CW) threshold operation. The model has been applied to investigate a possibility to use these devices as carrier-wave lasing sources in the third-generation optical-fibre communication. In this simulation, all physical (optical, electrical, thermal and gain) phenomena crucial for a laser operation including all important interactions between them are taken into consideration. As expected, the 1.5λ-cavity VCSEL has been found to demonstrate the lowest RT CW threshold. However, for many VCSEL applications, the analogous VCSEL equipped with a longer 3λ-cavity should be recommended because it exhibits only slightly higher threshold but manifest much better mode selectivity -the desired single-fundamental-mode operation has been preserved in these devices up to at least 380 K. The Auger recombination has been found to be decidedly the main reason of the threshold current increase at higher temperatures. A proper initial red detuning of the resonator wavelength with respect to the gain spectrum may drastically decrease CW lasing thresholds, especially at higher temperatures.

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“…Dudley et al 1992). However, their manufacturing is too expensive and troublesome to become lasing carrier sources in the mass optical-fibre communication.…”

Section: Introductionmentioning

confidence: 93%

Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region

Sarzała

Nakwaski

2006

Opt Quant Electron

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“…This procedure has been utilized to integrate InP-based gain regions with high quality GaAs-based distributed Bragg reflectors (DBRs) in vertical cavity surface emitting lasers (VCSELs) [11], [12] and semiconductor disk laser (SDLs) [13], [14]. However, the high bonding temperatures of 650°C can introduce thermomechanical stresses into the assembly due to mismatched coefficients of thermal expansion [15].…”

Section: Introductionmentioning

confidence: 99%

Multi-Watt Semiconductor Disk Laser by Low Temperature Wafer Bonding

Rantamäki

Lyytikäinen

Heikkinen

et al. 2013

IEEE Photon. Technol. Lett.

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We present wafer bonding techniques applied for the first time in integrating GaAs-based distributed Bragg reflectors (DBRs) with InP-based active regions in optically pumped semiconductor disk lasers. The bonding procedures are performed at a modest temperature of 200°C and enable multiwatt output powers from 1.3 µm semiconductor disk lasers. These technologies are critical for vertical-cavity lasers emitting in the range 1.3-1.6 µm since monolithically grown lattice-matched InP structures suffer from DBRs with low refractive index contrast and poor thermal conductivity when compared with GaAs-based DBRs.Index Terms-Low temperature wafer bonding, molecular beam epitaxy (MBE), semiconductor disk laser (SDL).

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“…Simply put, wafer bonding enables the integration of materials that cannot be grown monolithically without introducing an excessive number of defects due to mismatched lattice constants and coefficients of thermal expansion [142]. This technique has been applied earlier in the development of infrared VCSELs [143] and recently also to multi-junction solar cells [144]. It also appears to be the optimal solution for combining GaAs-based DBRs with InP-(or GaSb)-based active regions [145], since the results obtained from monolithically grown metamorphic structures have been modest in comparison [146][147][148].…”

Section: Wafer Bonding Techniques For Long Wavelength Infraredmentioning

confidence: 99%

“…The first wafer-bonded VECSEL was demonstrated with a GaAs-based DBR and an InP-based active region using wafer fusion [118], but a similar procedure had been demonstrated as early as the 1990s for optically pumped VCSELs [143,181]. This bonding process uses compressive pressures of 3 kPa-3 MPa and temperatures over 500 °C, which induce bonding via slight plastic deformation and atomic diffusion [145,156].…”

Section: Wafer Bonding Of Gaas-based Dbrs With Vecselmentioning

confidence: 99%