Structure Optimisation of a Possible 1.5-μm GaAs-based Vertical-cavity Surface-emitting Laser Diode with the GaInNAsSb/GaNAs Quantum-well Active Region
Abstract:Structure optimisation of a possible 1.5-µm GaAs-based vertical-cavity surface-emitting laser diode with the GaInNAsSb/GaNAs quantum-well active region r o b e r t p . s a r z a ł a a n d w ł o d z i m i e r z n a k wa s k Abstract. Structure optimisation of the GaAs-based GaInNAsSb/GaNAs quantum-well (QW) verticalcavity surface-emitting diode lasers (VCSELs) has been carried out using the comprehensive threedimensional self-consistent physical model of their room-temperature (RT) continuous-wave (CW) threshol… Show more
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