Critical layer thickness of GaIn(N)As(Sb) QWs on GaAs and InP substrates for (001) and (111) orientations

Köksal, Koray; Gönül, B.; Oduncuoğlu, Murat

doi:10.1140/epjb/e2009-00151-2

Cited by 15 publications

(1 citation statement)

References 50 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The Bi interacts with the impurity level and splits the heavy and light hole energy bands. The bandgap of InP is 1.35 eV at room temperature and will be reduced by incorporating Bi to regulate the material bandgap [6,[8][9][10][11][12]. In InP 1−x Bi x alloy, the incorporated Bi atoms are believed to replace P atoms.…”

Section: Introductionmentioning

confidence: 99%

Az Miktarda Bizmut Eklenen Yarıiletken Alaşımlarının Optik Parametreleri

Oduncuoğlu¹

2020

El-Cezeri Fen Ve Mühendislik Dergisi

View full text Add to dashboard Cite

The research on dilute bismuth containing III-V semiconductor alloys and its applications are studied. These alloys are obtained by incorporating a small amount of Bi in the host semiconductor. The presence of Bi reduced the energy bandgap of the alloys. The bandgap and optical properties of InAs 1− Bi , InP 1-x Bi x, and InSb 1− Bi alloy systems are investigated for optoelectronic devices. The optical properties of semiconductors are important to change the properties of device performance. The refractive index strongly depends on the direct bandgap of the semiconductor alloys. The bandgap of the In-V-Bi semiconductor layer can be engineered by means of adding bismuth into InAs, InP, InSb. In this work, the refractive indices and the optical parameters of the In-V-Bi alloys are investigated.

show abstract