13.3 A 56Gb/s W-band CMOS wireless transceiver

Tokgoz, Korkut Kaan; Maki, Shotaro; Kawai, Seitaro; Nagashima, Noriaki; Emmei, Jun; Dome, Masato; Kato, Hisashi; Pang, Jian; Kawano, Yukio; Suzuki, Toshimitsu; Iwai, Taisuke; Seo, Yuuki; Lim, Kimsrun; Sato, S.; Li, Ning; Nakata, Kengo; Okada, Kei; Matsuzawa, Akira

doi:10.1109/isscc.2016.7417997

Cited by 41 publications

(9 citation statements)

References 3 publications

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“…The challenges of providing several tens of Gbps wireless links have been addressed by the scientific community following two different implementation approaches. The main characteristics of recent III-V [2][3][4][5][6][7][8][9][10], complementary metal-oxide semiconductor (CMOS)/bipolar CMOS (BiCMOS) [11][12][13][14][15][16][17][18][19][20][21], and photonic based [22,23] mmW multi-Gbps wireless transceivers are shown in Fig. 2.…”

Section: Introductionmentioning

confidence: 99%

“…It shall be mentioned that although the AWGN condition over 20% bandwidth is very unrealistic below 10GHz, recent channel measurements have shown that the channel is hardly affected by multipath at very high frequencies [24]. One characteristic that the most efficient state-of-the art CMOS transceivers have in common is the use of multiple parallel RF channels (i.e., channel-bonding) in order to relax the signal bandwidth vs the operating frequency [16,17,19,20], a characteristic that is shared with some of the photonic-based transceivers [22]. Indeed, even though high sampling frequency data converters exist to interface multi-GHz BW front-ends with their digital baseband processing units, their power consumption increases exponentially with sampling frequency beyond 0.5-1 Gsample/s, as shown in [25].…”

Section: Introductionmentioning

confidence: 99%

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Channel-bonding CMOS transceiver for 100 Gbps wireless point-to-point links

González-Jiménez

Dehos

Cassiau

et al. 2020

J Wireless Com Network

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5G systems and networks are expected to provide unprecedented data-rate to final users and services, in combination with increased coverage and density. The traffic generated at the edges of the network should be hauled through high capacity data-conveyors. Extremely high data-rate links able to provide optical-fiber like performance in the order of 100 Gbps are required to reduce the cost and increase the flexibility of the network infrastructure deployment. This paper presents a full transceiver architecture based on a channel-bonding radio-frequency front-end operating at millimeter-wave frequencies and digital baseband processing units able to provide such data-rates with a feasible implementation in low-cost CMOS technologies. The baseband section of the receiver includes digital compensation algorithms that allow to cope with some of the radio front-end impairments. The main functionalities of the proposed transceiver architecture are validated in hardware.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Channel-bonding CMOS transceiver for 100 Gbps wireless point-to-point links

González-Jiménez

Dehos

Cassiau

et al. 2020

J Wireless Com Network

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“…With the development of different industries, mobile devices are required to provide a high data rate with a small size, as reported in [1–3]. With the increase in the computational complexity of the systems, the number of individual system‐on‐chips or multicore processing chips in such systems increase manifold.…”

Section: Introductionmentioning

confidence: 99%

60 GHz wide‐band psi (Ψ)‐shaped long‐wire antenna for wireless on‐board chip‐to‐multi‐chip communication

Jang

Park

2020

IET Microwaves, Antennas & Propagation

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“…With broad bandwidth generally preferred by radio-astronomers, one of the design challenges for this scientific silicon receiver circuit is on how to extend the IF bandwidth without compromising its overall performance. This then prompts us to investigate the underlying wideband mixing mechanism, in the hope of designing a 77-110 GHz CMOS receiver with a wide IF bandwidth [17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

Analysis of wide‐IF‐band 65 nm‐CMOS mixer for 77–110 GHz radio‐astronomical receiver design

Huang

et al. 2019

IET Circuits, Devices & Systems

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This manuscript presents the design of a W-band receiver in which an radio frequency-low noise amplifier (RF-LNA), a wideband mixer, intermediate frequency (IF) amplification, a local oscillator frequency (LO) tripler and a driving amplifier are all integrated into one single chip of 1050 × 820 μm 2. To effectively extend the mixer's IF bandwidth while retaining its conversion gain, impacts of the mixing transistor's drain bias and output loading impedance are explored using a dual-modulation conversion-matrix method, which allows both the LO-induced transconductance modulation and channel-conductance modulation to be considered simultaneously. It is shown that, by merging the input capacitance of the IF amplifier into a highimpedance artificial transmission line, an actively biased mixer can have constant conversion gain over broad bandwidth. A 77-110 GHz 65 nm-complementary metal-oxide-semiconductor (CMOS) receiver with 33 GHz IF bandwidth is then designed and measured. Its conversion gain and noise figure are 10 and 20 dB, respectively, and the input-referred P1 dB is −15 dBm; the overall power consumption is 330 mW under 1.3 V drain bias.

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13.3 A 56Gb/s W-band CMOS wireless transceiver

Cited by 41 publications

References 3 publications

Channel-bonding CMOS transceiver for 100 Gbps wireless point-to-point links

Channel-bonding CMOS transceiver for 100 Gbps wireless point-to-point links

60 GHz wide‐band psi (Ψ)‐shaped long‐wire antenna for wireless on‐board chip‐to‐multi‐chip communication

Analysis of wide‐IF‐band 65 nm‐CMOS mixer for 77–110 GHz radio‐astronomical receiver design

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