Analysis of wide‐IF‐band 65 nm‐CMOS mixer for 77–110 GHz radio‐astronomical receiver design

Huang, Chang‐Hung; Wu, Kun-Long; Hu, Robert; Chang, Chi‐Yang

doi:10.1049/iet-cds.2018.5269

Cited by 7 publications

(3 citation statements)

References 34 publications

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“…The total power consumption of the Monolithic Microwave Integrated Circuit (MMIC) is approximately 1.8 W. The optimal LO power is utilized for each curve, with a frequency step of 0.6 GHz for the RF. Table 3 presents the measured performance of other reported receivers, with detailed information available in references [69][70][71][72]. The newly designed GaN receiver exhibits much higher gain than other chips, demonstrating the excellent performance of this technology.…”

Section: Jinst 19 P06046mentioning

confidence: 99%

GaN-based W-band receiver chip development for fusion plasma diagnostics

Li,

Chen,

Chen

et al. 2024

J. Inst.

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Millimeter-wave diagnostics have proven effective on various magnetic fusion devices worldwide, yet the formidable challenges posed by the harsh environments of future burning plasma devices, characterized by extreme temperatures, pressures, and radiation levels, remain a significant hurdle. To address these challenges, the utilization of wide bandgap Gallium Nitride (GaN)-based millimeter-wave diagnostics is a most promising solution for fusion reactor safety monitoring and control. A noteworthy W-band GaN-based system-on-chip receiver has been the demonstrated by employing HRL T3 40 nm GaN technology. This receiver chip, compactly designed with dimensions of 3 × 5 mm2, incorporates essential components such as the 75–110 GHz RF Low-Noise Amplifier (LNA), mixer, Intermediate Frequency (IF) amplifier, and Local Oscillator (LO) chain. This receiver chip will be packaged as a millimeter-wave receiver module and applied on the DIII-D National Fusion Facility, for fusion plasma edge shape monitoring for operational safety and dangerous disruption prediction. The laboratory measurement results have demonstrated suitable performance. This advancement is pivotal for accurate analysis of plasma behavior in the extreme conditions of burning plasma devices, driving progress in fusion research and technology.

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Section: Jinst 19 P06046mentioning

confidence: 99%

GaN-based W-band receiver chip development for fusion plasma diagnostics

Li,

Chen,

Chen

et al. 2024

J. Inst.

Self Cite

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“…103,110,120 Therefore, different techniques have been proposed in the literature while considering the flexibility within the mixer and their wideband operation. 121 This section discusses some of the common challenges in designing such mixers and the corresponding techniques used to overcome these problems.…”

Section: Design Challenges and Techniquesmentioning

confidence: 99%

Recent advancement in the design of mixers for software‐defined radios

Mehta

Donelli

2021

Int J RF Mic Comp-Aid Eng

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The implementation of software-defined radio necessitates a versatile radio frequency (RF) front-end that can support multiple standards in different frequency bands. This article presents the state-of-the-art multiband and wideband mixers in the context of different receiver architectures suitable for softwaredefined radio (SDR). Wideband and multiband mixer designs reported in the literature are categorized on the basis of their circuit architecture. This study tabulates the results of mixer designs with an emphasis on noise figure (NF), conversion gain (CG), linearity, and image rejection ratio. The best parameters reported in the comparison are 68-84 dB of CG, 3.2 dB of NF, 2.5 mW of power consumption, 12.5 dBm of third-order input intercept point, and 0.015 mm 2 of area at different frequencies. The study also discusses the design challenges and techniques to overcome those issues. The article concludes with the summary and prospective developments for SDR architectures.

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“…With the rise of multistandard multiband communication systems, broadband building blocks have attracted great attention [1–4]. Phase‐locked loops (PLLs) are one of the most important parts in modern wireless communication systems [5 ,6].…”

Section: Introductionmentioning

confidence: 99%

A 0.6 V 2.7 mW 94.3% locking range injection‐locked frequency divider using modified varactor‐less Colpitts oscillator topology

Qian

Wang

et al. 2021

IET Circuits, Devices & Systems

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This study presents a 4.6–12.8 GHz injection‐locked frequency divider (ILFD) based on modified varactor‐less Colpitts oscillator topology. A modified Colpitts ILFD is proposed to improve the LR and reduces power consumption, simultaneously. Meanwhile, the forward body bias technique is utilized to further decrease power consumption. Based on the 55 nm CMOS technology, a modified varactor‐less Colpitts ILFD with a free‐running frequency of 4.05 GHz is implemented. The proposed modified varactor‐less Colpitts ILFD exhibits 94.3% LR from 4.6 to 12.8 GHz with an injection power of 0 dBm. It consumes 2.7 mW power from 0.6 V supply voltage and the core area is 0.38 mm2.

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Analysis of wide‐IF‐band 65 nm‐CMOS mixer for 77–110 GHz radio‐astronomical receiver design

Cited by 7 publications

References 34 publications

GaN-based W-band receiver chip development for fusion plasma diagnostics

GaN-based W-band receiver chip development for fusion plasma diagnostics

Recent advancement in the design of mixers for software‐defined radios

A 0.6 V 2.7 mW 94.3% locking range injection‐locked frequency divider using modified varactor‐less Colpitts oscillator topology

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