128 x 128 pixel uncooled bolometric FPA for IR detection and imaging

Jerominek, Hubert; Pope, Timothy D.; Alain, Christine; Zhang, Rose; Lehoux, Mario; Picard, Francis; Fuchs, Ronald; Grenier, Carol; Rouleau, Yves; Cayer, Felix; Savard, Simon; Bilodeau, Ghislain; Couillard, Jean-François; Larouche, Carl; Ngo, Linh Phong

doi:10.1117/12.328058

Cited by 16 publications

(4 citation statements)

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“…INO has been active in the development of customized uncooled bolometers for more than 20 years [1][2][3][4][5][6] . Various applications were targeted, including space applications where linear and 2D arrays were fabricated for Earth observation [3][4][5] .…”

Section: Introductionmentioning

confidence: 99%

On the figure of merit of uncooled bolometers fabricated at INO

Généreux

Tremblay

Girard

et al. 2016

Infrared Technology and Applications XLII

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This paper reports the NETD values of various uncooled bolometers fabricated at INO. They are measured using an external readout circuit that emulates the readout scheme of a commercial ROIC. The measured NETD values range between 6 and 75 mK, depending on the pixel pitch and response time. Pixel pitches of 12, 17 and 35 µm are considered. The figure of merit of the characterized detectors is below 350 mK*ms.

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Section: Introductionmentioning

confidence: 99%

On the figure of merit of uncooled bolometers fabricated at INO

Généreux

Tremblay

Girard

et al. 2016

Infrared Technology and Applications XLII

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“…Numerous custom uncooled Focal Plan Arrays (FPAs) have been developed for both space and commercial applications. Examples of prototypes that were developed include 128x128 (52 µm) 1 , 160x120 (52 µm) 2 , 256x1 (52 µm) 3 , 512x3 (39 µm) 4 , EarthCARE BBR (100 µm) 5 and 384x288 (35 µm) 6 arrays. More recently INO has, in the course of the ESA's GSTP5 program, developed 17 µm bolometers for a megapixel array (see Figure 1).…”

Section: Introductionmentioning

confidence: 99%

Vanadium oxide thin film with improved sheet resistance uniformity

et al. 2014

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This paper reports on the deposition of vanadium oxide thin films with sheet resistance uniformity better than 2.5% over a 150 mm wafer. The resistance uniformity within the array is estimated to be less than 1%, which is comparable with the value reported for amorphous silicon-based microbolometer arrays. In addition, this paper also shows that the resistivity of vanadium oxide, like amorphous silicon, can be modeled by Arrhenius' equation. This result is expected to significantly ease the computation of the correction table required for TEC-less operation of VO x -based microbolometer arrays.

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“…INO, a Quebec firm, has integrated uncooled bolometric sensors, which are micro-electro-mechanical systems (MEMS), and CMOS readout circuits. These VI-CMOS image sensors are designated for the IR and THz bands [ 11 , 12 ].…”

Section: Introductionmentioning

confidence: 99%

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

Skorka

Joseph

2011

Sensors

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Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

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128 x 128 pixel uncooled bolometric FPA for IR detection and imaging

Cited by 16 publications

References 0 publications

On the figure of merit of uncooled bolometers fabricated at INO

On the figure of merit of uncooled bolometers fabricated at INO

Vanadium oxide thin film with improved sheet resistance uniformity

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

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