1240nm high-power GaInNAs laser diodes

Abstract

We have fabricated 1240nm GaInNAs high-power semi-conductor laser diodes. In pulsed operation 1000 mum x 100 mum laser diodes show record low threshold current densities of 174 Acm(-2). Continuous wave output powers exceeding 4.6 Watts at room temperature and 6.2 Watts at a heatsink temperature of -5 degrees C are obtained from 1300 mum x 200 mum devices. The maximum wallplug efficiency of the device exceeds 40 % and the internal quantum efficiency reaches 0.89. Preliminary lifetime tests were performed for about 1000 h and show stable high-power operation.