1240nm GaInNAs high power laser diodes

Design of 1178 nm diode laser with step waveguide layers for reduced voltage and low vertical divergence

“…We can find that the peak position of the modal gain is at 1178 nm and the peak gain is 12.5 cm −1 . [13][14][15]. Since the simulated far field profile by the method used here is consistent well with the experimental result in our previous work [20], we believe the vertical far field divergence can be further reduced by broadening the mode size.…”

“…By optimizing the crystal growth and the barrier materials, an output power of 3 W and an efficiency of more than 40% have been achieved for 1178 nm distributed Bragg reflector (DBR) tapered lasers with an InGaAs QW [12,13]. By incorporating a small amount of nitrogen into the QW, the crystal strain is reduced and an output power of above 4 W has been achieved with an InGaNAs QW [14][15][16].…”

“…In our previous work, we have demonstrated 980 nm diode lasers with a low divergence of less than 15 • [18][19][20]. However, the reported 1178 nm diode lasers have a large vertical beam divergence, which is around 40 • with a full width at half maximum [13][14][15]. Currently, there are several designs developed for a low vertical divergence, including super large optical cavity [21], mode expansion layer [22], anti-guiding layer [23], and photonic crystal structure [24,25].…”