Inorganic precipitate membranes play an important role in chemobrionics and origin of life research. They can involve a range of catalytic materials, affect crystal habits, and show complex permeabilities. We produce such membranes in a microfluidic device at the reactive interface between laminar streams of hydroxide and Co­(II) solutions. The resulting linear membranes show striking color bands that, over time, expand in the direction of the Co­(II) solution. The cumulative layer thicknesses (here up to 600 μm) obey square root laws, indicating diffusion control. The effective diffusion coefficients are proportional to the hydroxide concentration, but the membrane growth slows down with increasing concentrations of Co­(II). On the basis of spatially resolved Raman spectra and other techniques, we present chemical assignments of the involved materials. Electron microscopy reveals that the important constituent β-Co­(OH)2 crystallizes as thin hexagonal microplatelets. Under drying, the membrane curls into spirals, revealing mechanical differences between the layers.

Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm2 V−1 s−1 is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW−1 with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz−1/2. Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.

No abstract

Pyrophosphate might have functioned as an energy storage/currency molecule on early Earth, essential for the emergence of life. Here we synthesized mineral membranes involving iron(II), iron(III), and other divalent metal cations (calcium, manganese, cobalt, copper, zinc, and nickel) and tested their ability to catalyze the formation of pyrophosphate from phosphate and acetyl phosphate across steep pH gradients in microfluidic devices. We studied the chemical compositions of the precipitate membranes (which included vivianite, goethite, and green rust) using in situ and ex situ micro‐Raman spectroscopy. The yields of pyrophosphate were determined by aqueous 31P NMR spectroscopy. We found that Fe2+ and Ca2+ were the best catalysts for pyrophosphate synthesis among investigated ions; Fe3+ and mixed‐valence iron membranes were also able to promote pyrophosphate formation. In addition, the pH gradients across the membranes affected the pyrophosphate yields and the smallest pH gradient resulted in the highest yield. These results suggest a possible route of substrate phosphorylation in prebiotic hydrothermal systems.

Low operating voltages have been long desired for thin-film transistors (TFTs). However, it is still challenging to realise 1-V operation by using conventional dielectrics due to their low gate capacitances and low breakdown voltages. Recently, electric double layers (EDLs) have been regarded as a promising candidate for low-power electronics due to their high capacitance. In this work, we present the first sputtered SiO2 solid-state electrolyte. In order to demonstrate EDL behaviour, a sputtered 200 nm-thick SiO2 electrolyte was incorporated into InGaZnO TFTs as the gate dielectric. The devices exhibited an operating voltage of 1 V, a threshold voltage of 0.06 V, a subthreshold swing of 83 mV dec−1 and an on/off ratio higher than 105. The specific capacitance was 0.45 µF cm−2 at 20 Hz, which is around 26 times higher than the value obtained from thermally oxidised SiO2 films with the same thickness. Analysis of the microstructure and mass density of the sputtered SiO2 films under different deposition conditions indicates that such high capacitance might be attributed to mobile protons donated by atmospheric water. The InGaZnO TFTs with the optimised SiO2 electrolyte also showed good air stability. This work provides a new pathway to the realisation of high-yield low-power electronics.

Thin-walled tubes that classically form when metal salts react with sodium silicate solution are known as chemical gardens. They share similarities with the porous, catalytic materials in hydrothermal vent chimneys, and both structures are exposed to steep pH gradients that, combined with thermal factors, might have provided the free energy for prebiotic chemistry on early Earth. We report temperature effects on the shape, composition, and opacity of chemical gardens. Tubes grown at high temperature are more opaque, indicating changes to the membrane structure or thickness. To study this dependence, we developed a temperature-controlled microfluidic device, which allows the formation of analogous membranes at the interface of two coflowing reactant solutions. For the case of Ni­(OH)2, membranes thicken according to a diffusion-controlled mechanism. In the studied range of 10–40 °C, the effective diffusion coefficient is independent of temperature. This suggests that counteracting processes are at play (including an increased solubility) and that the opacity of chemical garden tubes arises from changes in internal morphology. The latter could be linked to experimentally observed dendritic structures within the membranes.

Thin-film transistors (TFTs) based on ultra-thin amorphous indium gallium zinc oxide (a-IGZO) semiconductors down to 4 nm were studied motivated by the increasing cost of indium. At and below 5 nm, it was found that the field-effect mobility was severely degraded, the threshold voltage increased, and the output characteristics became abnormal showing no saturated current. By encapsulating a layer of polymethyl methacrylate on the IGZO TFTs, the performance of the 5-nm-thick device was effectively recovered. The devices also showed much higher on/off ratios, improved hysteresis, and normal output characteristic curves as compared with devices not encapsulated. The stability of the encapsulated devices was also studied over a four month period.

A diode-end-pumped dual-wavelength mode-locked laser based on Nd:LuYSiO5 crystal is demonstrated. With a SESAM, simultaneous mode locking at the 1075.8 nm and 1078.1 nm is achieved and the dual-wavelength mode locked pulses have a pulse width of 8.9 ps. Due to frequency beating, ultrahigh repetition rate ultrafast pulses with 997 fs pulse width and 0.59 THz repetition rate are further formed. Under 12.7 W absorbed pump power 1.7 W mode-locked output power was obtained, the slope efficiency of the mode locked laser was 24.3%.