1200V reverse conducting IGBT

Takahashi, Daisuke; Yamamoto,; Aono,; Minato,

doi:10.1109/wct.2004.239844

Cited by 96 publications

(38 citation statements)

References 1 publication

Supporting

Mentioning

Contrasting

Order By: Relevance

“…1e) [5]. This monolithic chip is based on the vertical integration of multiple Reverse Conducting IGBT (RC-IGBT) [9][10][11]. For the low-side, the IGBTs are monolithically integrated in a vertical single multi-pole power chip (Fig.…”

Section: Illustration Of the Proposed Three-chip Integration Approachmentioning

confidence: 99%

Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

Lale

Videau

Bourennane

et al. 2015

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

View full text Add to dashboard Cite

Section: Illustration Of the Proposed Three-chip Integration Approachmentioning

confidence: 99%

Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

Lale

Videau

Bourennane

et al. 2015

2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe)

View full text Add to dashboard Cite

“…This can be done by implementing a shorted anode structure interrupting the p + -anode diffusion and including an n + -layer. Several attempts have been made in the 600V-1.2kV range [47,48] although some measures must be taken to improve both the IGBT and the free-wheeling diode since both aspects contradict each other. In this sense, an interesting RC-IGBT structure rated 3.3kV has been reported [49], whose crosssection is shown in Fig.…”

Section: Igbtsmentioning

confidence: 99%

A Review of Si MOS-gated Power Switches and PiN Rectifiers

et al. 2012

View full text Add to dashboard Cite

Original scientific paperRevolutionary advances and developments have been made in power semiconductor device technologies during the last decades which have allowed the improvement of power electronic systems in terms of their efficiency and reliability. The advent of MOS-gated power switches such as the power MOSFET and the IGBT showing high input impedance has been a real breakthrough in the design and fabrication of power electronic systems. This paper reviews the recent progress in the development of Si MOS-gated power devices and rectifiers. The evolution of these devices' technologies together with the introduction of revolutionary device concepts is also discussed. Concretely, the introduction of trench technologies for power MOSFETs and the use of the super-junction concept for breaking the 1D-silicon limit are highlighted. Developments in IGBTs such as those based on the use of thin wafers and strategies for optimising the plasma distribution in PT IGBTs during the on-state are also addressed. Finally, advances in PiN diode technologies including new concepts for both the anode and the cathode structures are also reviewed. These approaches have allowed the reduction of the PiN total losses and a soft reverse recovery behaviour, leading to a more rugged device.Key words: MOS-gated power devices, power MOSFETs, CoolMOS, super-junction devices, IGBTs, PiN rectifiers Prikaz stanja silicijevih MOS upravljanih učinskih sklopova i PiN ispravljača. U posljednjim desetljećima svjedočimo razvoju sustava učinske elektronike u pogledu povećanja efikasnosti i pouzdanosti. Napredak je omogućen zahvaljujući izvanrednom napredku koji je postignut na području učinskih poluvodiča. Pojava MOS upravljanih učinskih sklopova s visokom ulaznom impedancijom, kao što su MOSFET i IGBT, rezultirao je probojem u projektiranju i proizvodnji sustava učinske elekronike. Ovajčlanak daje uvid u napredak koji je u posljednje vrijeme ostvaren u razvoju silicijeve MOS upravljane učinske elektronike i ispravljača. Uz dosadašnji razvoj tehnologije navedenih komponenata, učlanku je uključen i osvrt na revolucionarne koncepte budućeg razvoja. Konkretno, u radu su objašnjene tehnologija rova za MOSFET i korištenje koncepta super spoja za probijanje granice jednodimenzionalnog silicija. Razmatrana su i poboljšanja IGBT-ova koja se baziraju na uporabi tankih pločica a strategijama optimiranja distribucije plazme u PT IGBT-ovima za vrijeme aktivnog stanja. Konačno, prikazan je i napredak u tehnologiji PiN dioda koji uključuje nove strukturalne koncepte katode i anode. Ovi pristupi su omogućili smanjenje ukupnih gubitaka PiN diode i blagu dinamiku reverznog oporavka, što rezultira povećanjem robusnosti sklopa.

show abstract

“…In most cases, the IGBT needs to connect with an anti-parallel free-wheeling diode (FWD) for reverse conduction. In order to improve the power handling capability of the IGBT modules, an attractive approach is to incorporate the FWD and IGBT into a monolithic silicon chip [4]. Such solution has been implemented and then the RC-IGBT appears in the market partly due to the thin-wafer processing technology in recent years [5,6,7,8].…”

Section: Introductionmentioning

confidence: 99%

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Xie

Wei

et al. 2017

IEICE Electron. Express

View full text Add to dashboard Cite

We propose two novel ways to alleviate the reverse conducting insulated gate bipolar transistor (RC-IGBT) snapback phenomenon by introducing the floating field stop layer with a lightly doped p-floating layer and recess structure at the backside. The floating field stop layer is submerged in the N-drift region and located several micrometers above the P + anode region, which would not degrade the blocking capability but can suppress the snapback phenomenon effectively. When the collector length exceeds 100 µm, the snapback voltage ΔV SB of the floating field stop RC-IGBT with the p-floating layer can be less than 0.5 V. Furthermore, the recess structure at the backside can separate the N + short and P + anode region, which will be beneficial to eliminate the snapback. Finally, an RC-IGBT with a floating buffer layer and recess at the backside is proposed. Compared to the RC-IGBT featuring an oxide trench between the N + short and P + anode, the proposed one has utilized the simple recess structure to replace the costly oxide trench and achieved the identical characteristics simultaneously.

show abstract

1200V reverse conducting IGBT

Cited by 96 publications

References 1 publication

Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

A Review of Si MOS-gated Power Switches and PiN Rectifiers

A snapback-free reverse conducting IGBT with recess and floating buffer at the backside

Contact Info

Product

Resources

About