Analysis of the three-chip switching cells approach for integrated multiphase power converter combining monolithic and hybrid techniques: Experimental validation on SiC and Si power assembly prototypes

Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration – Basic Concept and Technology

“…2 (a), the high-side row multi-terminal chip is directly bonded by its backside on a DBC/IMS substrate [3]. However, the low-side row multi-terminal chip is advantageously flipped and is bonded by its source side as previously proposed [11][12]. In this configuration the switching loop is not planar-type as in a standard drain-side soldering packaging but orthogonal-type with a lowering loop area.…”