1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

Coldren, C.W.; Larson, M.C.; Spruytte, S.G.; Harris, James S.

doi:10.1049/el:20000365

Cited by 90 publications

(32 citation statements)

References 3 publications

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“…At Stanford [92][93][94], we chose a design much like that used in the 850 nm VCSELs, where the mirrors are doped, one n-type and the other p-type, with the current driven through the mirrors. The VCSEL structure consist of three 7 nm thick Ga 0.62 In 0.38 N 0.016 As 0.958 Sb 0.026 QWs with 20 nm thick GaNAs barriers.…”

Section: Gainnassb Long-wavelength Vcselsmentioning

confidence: 99%

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Harris

Kudrawiec

Yuen

et al. 2007

Physica Status Solidi (b)

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In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 -1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 -1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.

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Section: Gainnassb Long-wavelength Vcselsmentioning

confidence: 99%

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Harris

Kudrawiec

Yuen

et al. 2007

Physica Status Solidi (b)

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“…GaInNAs has shown encouraging characteristics at long wavelengths, including low threshold current densities, high temperature CW operation and high To in the wavelength range of 1. 1-1.3 gm [2][3][4].…”

Section: Introductionmentioning

confidence: 99%

GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices

Gambin

Wistey

et al. 2001

MRS Proc.

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Dilute nitrogen GaInNAs is a new promising material as an active region for use in 1.3 and 1.55 gm opto-electronic devices. It has been commonly observed that increasing the nitrogen content generally reduces the optical emission intensity and increases laser threshold. However, some non-radiative recombination defects are removed from the material during a post-growth anneal. One drawback to the anneal is that nitrogen out-diffuses from the quantum wells and blue-shifts optical emission. Using a modified active region structure, we have decreased nitrogen out-diffusion and reduced the luminescence blue-shift while still improving crystal quality. The growth consists of high nitrogen GaNAs barriers grown between lower nitrogen GaInNAs quantum wells. As an added benefit, the nitride barriers strain compensate for the compression in the high In content GaInNAs wells. Furthermore, in order to improve luminescence at long wavelengths, we have added Sb to GaInNAs and have observed high intensity photoluminescence (PL) out to 1.6 gin. We have grown and fabricated in-plane GaInNAs lasers that emit at 1.3 g.m with a current threshold density of 1.2 kA/cn2 and GaInNAsSb lasers with emissions at 1.46 gm with a current threshold of 2.8 kA/crn2.

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“…The large difference in electronegativity and in atom size between nitrogen and arsenic leads to a reduction of the energy bandgap with increasing mole fraction of N, roughly 150 meV per percent N, and lowers net lattice strain in InGaAsN on GaAs [1]. The novel electronic structure can maintain strong carrier confinement [2] even at high temperature, which makes pseudomorphic In x Ga 1Àx As 1Ày N y a promising semiconductor for cost-effective GaAs-based telecommunication applications in the 1.3-1.55 mm spectral region [3][4][5][6], which is currently dominated by the InP technology. Recently, low-threshold, high power, high temperature operation single mode edge emitting lasers at 1.26 mm [7], and CW operation of VCSEL at 1.28 mm [8], have been demonstrated using InGaAsN materials.…”

Section: Introductionmentioning

confidence: 99%

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

Peng¹,

Liu²,

Konttinen³

et al. 2005

Journal of Crystal Growth

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1200 nm GaAs-based vertical cavity lasers employing GaInNAs multiquantum well active regions

Cited by 90 publications

References 3 publications

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

Development of GaInNAsSb alloys: Growth, band structure, optical properties and applications

GaInNAs Material Properties for Long Wavelength Opto-Electronic Devices

Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

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