Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

Peng, C.S.; Liu, H.F.; Konttinen, J.; Pessa, M.

doi:10.1016/j.jcrysgro.2005.01.020

Cited by 14 publications

(9 citation statements)

References 18 publications

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“…Then, we have performed post growth annealing, which is a generally used technique for improvement of the GaInNAs(Sb) material quality . Another set of GaInNAsSb solar cell chips was cleft into pieces and annealed in nitrogen atmosphere.…”

Section: Resultsmentioning

confidence: 99%

Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Miyashita

Ahsan

Okada

2015

Progress in Photovoltaics

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An improved photocurrent production is demonstrated in dilute nitride GaInNAsSb solar cells grown by molecular beam epitaxy. The photovoltaic properties were investigated by increasing the thickness of GaInNAsSb layers from 1.0 to 3.0 μm. The amount of photon absorption increased with increasing thickness. Yet an incomplete photocarrier collection was observed in the 2.0-and 3.0-μm-thick GaInNAsSb devices. This feature is due to a partial lack of electric field in the GaInNAsSb region. In order for complete carrier collection aided by the electric field, the background-doping level should be as low as~10 14 cm À3 in a thick undoped-GaInNAsSb absorption layer. Here, the effectiveness of annealing on improving the field-assisted carrier collection is shown. This is ascribed to a decrease of the background doping in the GaInNAsSb layer. In a properly designed device for a 1.0-eV GaInNAsSb cell, it is demonstrated that the external quantum efficiency can reach as high as 90% at wavelengths longer than the GaAs bandgap.

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Section: Resultsmentioning

confidence: 99%

Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Miyashita

Ahsan

Okada

2015

Progress in Photovoltaics

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“…Thus in asgrown GaAsInN1 QW, Ga 3 In 1 N and Ga 2 In 2 N SRO atomic arrangements are dominated. Annealing is accompanied by diffusion of nitrogen atoms from Ga to In (see also [25] on the effect of QW interdiffusion) and formation of In 4 N SRO, which results in a 60 meV blue shift of PL spectra in GaAsInN2 QW. Our results using HSR spectra allow us connect a carrier localization in the GaAs(In, Sb)N QWs to specific SRO and PS atomic arrangement, i.e.…”

Section: High Spatial Resolution Photoluminescence Spectramentioning

confidence: 99%

Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells

Mintairov

Sun

Merz

et al. 2009

Semicond. Sci. Technol.

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Fine structure related to different types of atomic arrangements (short-range order, phase separation and quantum dots) was observed in high-spatial-resolution low-temperature photoluminescence (PL) spectra of GaAsInN, GaAsSbN and GaAsInSbN quantum wells (QWs) containing ∼1.5% N and emitting at 1.2-1.3 μm. Using photoreflectance and temperature-dependent PL spectroscopy, we measured the activation energies and band-tail width of localized states, associated with different atomic arrangements, to be 5-66 meV. We found that the emission intensity in these GaAs(In, Sb)N QWs weakly depends on carrier localization and that it is limited at cryogenic temperatures by exciton scattering by N interstitials, while at room temperature it is limited by an intrinsic non-radiative recombination channel having activation energy of ∼60 meV and capture time between 0.01 and 1 ps.

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“…First, in the H-free QWs, the PL peak moves at higher energy with increasing annealing temperature, in agreement with the mentioned, previous studies. [16,17] Second, the amount of band gap recovery induced by hydrogenation decreases rapidly with increasing annealing temperature. This latter finding indicates that an In-rich neighborhood inhibits the N atom passivation.…”

Section: Resultsmentioning

confidence: 99%

“…In this regard, previous studies showed that, in InGaAsN, thermal annealing increases both the number of In-N bonds and the band gap energy. [16][17][18] Therefore, PL measurements combined with annealing treatments provide a quite reliable method to ascertain the migration of In atoms toward N as well as how the variation of the N environment from a Ga-rich to an In-rich one can affect hydrogen's ability to neutralize the effects of N. Present PL investigations of In y Ga 1−y As 1−x N x quantum wells (QWs) show that, for increasing H doses, the alloy band gap energy increases, but it does not reach the corresponding N-free In y Ga 1−y As band gap energy. Moreover, the measurement of the dependence of the band gap recovery of hydrogenated InGaAsN on the thermal annealing temperature shows that an In-rich environment for N atoms results in a much lower degree of N passivation.…”

Section: Introductionmentioning

confidence: 99%

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

Filippone

Younis

Mattioli

et al. 2021

Adv Funct Materials

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In dilute nitride InyGa1−yAs1−xNx alloys, a spatially controlled tuning of the energy gap can be realized by combining the introduction of N atoms—inducing a significant reduction of this parameter—with that of hydrogen atoms, which neutralize the effect of N. In these alloys, hydrogen forms N–H complexes in both Ga‐rich and In‐rich N environments. Here, photoluminescence measurements and thermal annealing treatments show that, surprisingly, N neutralization by H is significantly inhibited when the number of In‐N bonds increases. Density functional theory calculations account for this result and reveal an original, physical phenomenon: only in the In‐rich N environment, the InyGa1−yAs host matrix exerts a selective action on the N–H complexes by hindering the formation of the complexes more effective in the N passivation. This thoroughly overturns the usual perspective of defect‐engineering by proposing a novel paradigm where a major role pertains to the defect‐surrounding matrix.

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Mechanism of photoluminescence blue shift in InGaAsN/GaAs quantum wells during annealing

Cited by 14 publications

References 18 publications

Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Generation and collection of photocarriers in dilute nitride GaInNAsSb solar cells

Atomic arrangement and emission properties of GaAs(In, Sb)N quantum wells

Selective Effects of the Host Matrix in Hydrogenated InGaAsN Alloys: Toward an Integrated Matrix/Defect Engineering Paradigm

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