118 GHz MMIC radiometer for the (IMAS) integrated multispectral atmospheric sounder

Sholley, M.; Barber, G.; Lai, R.; Barskey, M.; Tsai, R.; Streit, D.C.; Osgood, B.; Dowsing, J.; Nishimoto, M.; Kok, Yon-Lin; Huang, P.; Gage, C.; Huang, Tao; Nang, H.; Jackson, Charles M.; Chung, Yun Chur; Chan, S.; Mitchell, J. L.

doi:10.1109/mwsym.1999.779806

Cited by 15 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Superior microwave and millimeter wave performance of InGaAs/InAlAs/InP high electron mobility transistor (HEMT) microwave monolithic integrated circuits (MMICs) has been demonstrated for space and military applications over the frequency ranges 44 GHz [1][2], 94 GHz [3][4][5], 118 GHz [6][7], 155 GHz [8][9], 183-220 GHz [8,[10][11][12], and beyond 250 GHz [13][14][15]. To ensure the reliability of InAlAs/InGaAs/InP HEMT MMICs during their lifetime operation, it is important to demonstrate the high reliability performance of InAlAs/InGaAs/InP HEMT MMICs subjected to elevated temperature lifetest.…”

Section: Introductionmentioning

confidence: 99%

Progressive Schottky junction reaction induced degradation in Pt-sunken gate InP HEMT MMICs for high reliability applications

Chou

Leung

Biedenbender

et al. 2010

2010 IEEE International Reliability Physics Symposium

Self Cite

View full text Add to dashboard Cite

Reliability performance of 0.1-μm Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates was evaluated under elevated temperature lifetesting. The primary degradation mechanism was observed to be the progressive Schottky junction reaction with the Schottky barrier InAlAs and the InGaAs channel. Despite the progressive Schottky junction reaction with the InAlAs and InGaAs materials, the lifetest at T ambient of 280 °C projects the median-time-to-failure exceeding 1x10 6 hours at T channel of 125 °C. This result indicates that the promising initial reliability performance was achieved on Pt-sunken gate InP HEMT MMICs on 4-inch InP substrates.

show abstract