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2): JPL Microwave, LIDAR, Pasadena, CA, 91 109 (email Todd.C.Gaier@jpl.nasa.gov) ABSTRACTdesign of pseudomorphic high indium composition In this paper we will present recent work on low InGaAs channels. Cutoff frequencies of 300 GHz have noise amplifiers developed for very high frequencies been achieved at the highest indium compositions above 100 GHz. These amplifiers were developed with a greater than 70%. The 2nd process enhancement was unique InP-based HEMT MMlC process. The amplifiers the reduction of the gate length from 100 nm to 70 nm. have been developed for both cryogenic and room 15-20% improvement in cutoff frequency and temperature amplifier applications with state-of-art transconductance was observed in the shorter gate performance demonstrated from 100 GHz to 21 5 GHz.length devices compared to the baseline 100 nm devices with similar gate finger yield. The third area is the