110 GHz on-wafer measurement comparison on alumina substrate

Probst, T.; Doerner, Ralf; Ohlrogge, Matthias; Lozar, Roger; Arz, Uwe

doi:10.1109/arftg.2017.8255867

Cited by 23 publications

(9 citation statements)

References 6 publications

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“…TLs with different line lengths are often used for verification of measurement accuracy. 40,41) In addition, a TL is treated as one of the devices in the mmW frequency range, such as matching circuits in modern mmW to THz amplifiers. Accurate estimation of the electrical properties of simple TLs is vital for the development of mmW devices.…”

Section: Estimation Of the Electrical Properties Of Transmission Linesmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

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In this study, accuracy improvements in estimations of electrical properties of millimeter-wave devices were demonstrated using the probe-backside reflection method at frequencies up to 100 GHz. The dielectric properties of silicon wafers, with nominal resistivities from 1 Ωcm to 151 kΩcm, were preliminarily evaluated using the PBR method to determine the material parameters used in the electromagnetic simulation. The S-parameter of the mmW devices fabricated on the silicon wafers was calculated using the simulation. The calculated S-parameter was well accorded with the measured S-parameter of the devices fabricated on silicon wafers. The PBR method can provide more suitable material parameters than those calculated using the Drude model for resistive wafers with resistivities greater than 3 kΩcm. However, the accuracy was degraded compared to the Drude model in the most lossy 1–100 Ωcm wafer.

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Section: Estimation Of the Electrical Properties Of Transmission Linesmentioning

confidence: 99%

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Sakamaki

Kobayashi

2022

Jpn. J. Appl. Phys.

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“…Other researchers reported that degraded contact repeatability significantly affected measurements at millimeterwave frequencies. For instance, the measurement of the Sparameter was affected by the operator and probe tip condition [16].…”

Section: Introductionmentioning

confidence: 99%

“…Furthermore, the judgment differs based on the operator. Hence, the on-wafer Sparameter measurement depends significantly on the operator [16]. Third, on-wafer measurement is a destructive measurement because the surface of the contact pad is damaged by contact with the probe.…”

Section: Introductionmentioning

confidence: 99%

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Sakamaki

Horibe

2021

IEEE Trans. Instrum. Meas.

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“…The operator is thus forced to accommodate the RF probes on a new pad position. The calibration repeatability is therefore degraded [10] and the error terms calculation might be compromised, thus leading to discrepancies and questionable conclusions on measurements [11]- [14]. Several studies have been led with a focus on contact repeatability and discussions on measurement uncertainty in on-wafer measurement and probe positioning [13], [15].…”

Section: Introductionmentioning

confidence: 99%

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and Sub-mmW Frequencies Measurements

Cabbia

Fregonèse

Deng

et al. 2021

IEEE Trans. THz Sci. Technol.

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In this work we introduce novel transmission line standards for on-wafer TRL calibration employing a meandering architecture, which aims to keep the inter-probe distance constant and avoid any probe separation during the measurement process, yet establishing the required signal path length between the ports. Measurements will be performed up to 500 GHz on passive de-embedding structures and on a SiGe HBT; they will be calibrated with both a classic approach and this novel "meander-type" technique. Furthermore, measurements will be evaluated by means of electromagnetic (EM) simulation: for this purpose, we will make use of Ansys HFSS on passive test structures. Finally, a novel joint EM-SPICE co-simulation analysis will allow to provide simulated data for a transistor, thus extending our study to active devices; this will allow a complete characterization of the measurements and an insight on the physical limits of our calibration technique.

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110 GHz on-wafer measurement comparison on alumina substrate

Cited by 23 publications

References 6 publications

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Accuracy improvement in estimation of electrical properties of millimeter-wave circuit by probe-backside reflection method

Long-Term Stability Test on On-Wafer Measurement System in Frequency Ranges up to 325 GHz

Meander-Type Lines: An Innovative Design for On-Wafer TRL Calibration for mmW and Sub-mmW Frequencies Measurements

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