107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Tirelli, Stefano; Marti, Diego; Sun, Haifeng; Alt, Andreas R.; Benedickter, H.; Piner, Edwin L.; Bolognesi, C. R.

doi:10.1109/led.2009.2039847

Cited by 54 publications

(28 citation statements)

References 11 publications

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“…Hence, the reason for the high leakage current at the sub-threshold voltage is suspected to be due to the conduction path between the drain and the Si substrate. [9], and even superior to the reported values [10]. To the best of our knowledge, there are no reports on high f T /f MAX currently available for unpassivated GaN HEMTs on Si.…”

mentioning

confidence: 60%

“…It is obvious that the enhancement of f T / f MAX for the AlGaN/GaN HEMT is still a major concern although high f MAX has been achieved for highly scaled devices with SiN passivation. Only a few reports have been published for 0.1 μm gate AlGaN/ GaN HEMT technology exhibiting high f T /f MAX with passivation [9,10]. Hence, further performance enhancement for millimetre-wave applications warrants the implementation of deeply scaled devices which involves complicated gate geometries and process techniques.…”

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confidence: 99%

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High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

et al. 2015

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A high current gain cutoff frequency ( f T ) of 90 GHz and a peak maximum oscillation frequency ( f MAX ) as high as 150 GHz are reported for a rectangular-shaped gate AlGaN/GaN high-electron mobility transistor (HEMT) on a high resistive silicon (HR-Si) substrate. The combined high f T /f MAX values for 100 nm unpassivated gate device demonstrate the high-quality heterostructure on silicon substrate. The reported high-performance RF device characteristics are comparable and even superior to the existing passivated AlGaN/ GaN HEMTs of similar gate length. In addition, good DC characteristics have been recorded with the drain current density and an extrinsic transconductance of 0.6 A/mm and 157 mS/mm, respectively.Introduction: With the remarkable combination of superior physical properties and highly scaled device geometries, GaN-based highelectron mobility transistors (HEMTs) remain a good choice of device for high-power, wideband and high-temperature applications [1,2]. The high breakdown field, high-electron saturation velocity and large sheet carrier densities together with the implementation of short gate geometries (i.e. L g < 0.1 μm) make the GaN system the leading contender for solid-state power amplifiers at the microwave-and millimetrewave frequency range (30-300 GHz) [3][4][5]. Compared with the mature GaN technology on sapphire and SiC substrates, the handling of high power densities of GaN on the high resistive silicon (HR-Si) substrate promises a low-cost solution, provided the high-quality device grade GaN heterostructure is realised.The emerging reports on the millimetre-wave frequency performances of AlGaN/GaN-based HEMTs showcase the high-frequency solution of GaN on Si. For example, a fully passivated 75 nm gate AlGaN/GaN HEMT on Si demonstrates that a high f T /f MAX = 152/149 GHz with a large signal operation yields an output power of 2 W/mm at 40 GHz [6]. An attractive RF performance has been reported for GaN on Si with f T /f MAX = 100/206 GHz for a T-shaped 90 nm gate length [7]. A similar gate geometry AlGaN/GaN HEMT with the incorporation of a AlGaN back barrier yielding a high breakdown voltage (BV = 100 V) and a high f MAX of 226 GHz with a simultaneous f T of 63 GHz has been reported for L g = 160 nm [8]. It is obvious that the enhancement of f T / f MAX for the AlGaN/GaN HEMT is still a major concern although high f MAX has been achieved for highly scaled devices with SiN passivation. Only a few reports have been published for 0.1 μm gate AlGaN/ GaN HEMT technology exhibiting high f T /f MAX with passivation [9, 10]. Hence, further performance enhancement for millimetre-wave applications warrants the implementation of deeply scaled devices which involves complicated gate geometries and process techniques.In this Letter, we report a simple AlGaN/GaN HEMT heterostructure with a rectangular shaped 0.1 μm gate demonstrating good performance in both the DC and the RF regimes.

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confidence: 60%

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confidence: 99%

High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

et al. 2015

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“…1 InAlN with an In mole fraction of 0.17 can be lattice matched to GaN with a sheet charge density roughly twice that of typical AlGaN/GaN HEMTs. [2][3][4][5][6][7][8][9][10][11][12][13] This sheet charge density is due to the more than 4 Â increase in the spontaneous polarization of In 0.17 Al 0.83 N/GaN as compared to a traditional Al 0.2 Ga 0.8 N/GaN HEMT structure. Although there is no strain-induced piezoelectric component to the overall polarization charge of lattice-matched InAlN heterostructures, the spontaneous component dominates and leads to a total polarization charge that is more than 2 Â that of Al 0.2 Ga 0.8 N/GaN.…”

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confidence: 99%

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

Lo¹,

Liu²,

Ren³

et al. 2011

Journal of Vacuum Science & Technology B, Nanotechnology an

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“…The state of the art on Si(111) exhibits a power density of 5.1 W/mm at 18 GHz and 12 W/mm at 2.14 GHz [5], [6]. Moreover, the state of the art for F T and F Max are 107 GHz and 150 GHz respectively [7].…”

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confidence: 99%

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

Lecourt

Douvry

Defrance

et al. 2010

2010 Proceedings of the European Solid State Device Research Conference

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The fabrication of high transconductance AlGa /Ga high electron mobility transistors (HEMTs) grown on high-resistivity silicon substrate is reported with an AlGa barrier thickness of only 12.5 nm. A maximum DC current density of 655 mA/mm, a current gain cutoff frequency (F T ) of 75 GHz and a power-gain cutoff frequency (F MAX ) of 125 GHz are obtained for a 0.125 µm gate length transistor. The device provides a record peak extrinsic transconductance of 332 mS/mm and an intrinsic value of 509 mS/mm. To the authors' knowledge, the obtained transconductances are the highest reported values from AlGa /Ga devices grown on a Si(111) substrate. This performance demonstrates the potential of Ga transistors on silicon for low-cost microwave power applications.

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Cited by 54 publications

References 11 publications

High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

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107-GHz (Al,Ga)N/GaN HEMTs on Silicon With Improved Maximum Oscillation Frequencies

Cited by 54 publications

References 11 publications

High f T and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

High f T and f MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

High transconductance AlGaN/GaN HEMT with thin barrier on Si(111) substrate

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High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate

High f _T and f _MAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate