Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors

Abstract

Articles you may be interested inEffect of proton irradiation on thermal resistance and breakdown voltage of InAlN/GaN high electron mobility transistors J.

Impact of proton irradiation on dc performance of AlGaN/GaN high electron mobility transistors

“…7 In this case, the devices exhibited little degradation when irradiated with 15, 40, and 105 MeV protons, while the greatest degradation was measured at the lowest proton energy due to the larger nonionizing energy loss of the 1.8 MeV protons. 7 The effects of proton dose on dc characteristics of InAlN/GaN HEMTs were reported by Lo et al, 8 which revealed that more degradation was induced at higher irradiation dose, with reductions of g m of 1% and 15%, and increase of channel resistance of 6% and 28% for HEMTs exposed to 2 Â 10 11 and 2 Â 10 15 cm À2 protons, respectively. In addition, it was also reported that there was little degradation at doses below 10 14 cm À2 in III-nitride HEMTs.…”

Degradation of dc characteristics of InAlN/GaN high electron mobility transistors by 5 MeV proton irradiation

“…The proton energy at the exit of the cyclotron was 30 MeV. The proton energy at the sample was 5 MeV after passing through two aluminum degraders 15 . The thickness of each aluminum degrader was 2.7 mm.…”

“…5 The InAlN/GaN material system offers an attractive alternative to AlGaN/GaN for high power, high frequency applications. 15,16 The InAlN alloy can be synthesized lattice matched to GaN with large refractive index contrast and sheet charge density roughly twice that of typical AlGaN/GaN HEMTs. This sheet charge density is due to the more than 4Â increase in spontaneous polarization of In 0 .…”

“…2,3 Little is known about the effects of radiation on the InAlN/ GaN heterostructure, especially since it has lower defect density and an absence of lattice-mismatch induced strain compared to the more common AlGaN/GaN system. 15 In this paper we report on the degradation of dc characteristics of InAlN/GaN high electron mobility transistors (HEMTs) exposed to different doses of 5 MeV protons.…”

Effects of 2 MeV Ge+ irradiation on AlGaN/GaN high electron mobility transistors

“…For both GaN and the most common heterostructure AlGaN/GaN used in nitride-based high electron mobility transistors (HEMTs), the effects of proton and electron irradiation are reasonably well documented. [10][11][12][13][14][15][16][17][18][19][20][21][22][23] The carrier removal rate in proton irradiated n-GaN was found to be in the range10 2 -10 3 cm À1 depending on the proton energy and was shown to increase for higher donor concentrations. 22 The most prominent defect levels created are deep traps with activation energies of 0.13, 0.16-0.18, 0.2-0.21 eV, while electron irradiation created the 0.16-0.18 eV traps due to N vacancies.…”