1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Zhang, Yongxi; Sheng, Kuang; Су, Минг; Zhao, J.H.; Alexandrov, Peter; Fursin, L.

doi:10.1109/led.2007.895448

Cited by 34 publications

(12 citation statements)

References 12 publications

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“…A vertical Al ion implantation is done first to form the p++ region for ohmic contacts. Then, four groups of tilted Al ion implantations create the submicron vertical which is a critical parameter to ensure normally-off operation [9][10][11][12]. The four groups of implantations from the four directions have the same tilt angle and fully convert the mesa sidewalls and the trench bottoms into the p-gate regions with an Al concentration of 1e18 cm À3 .…”

Section: Gate and Isolation Implantationmentioning

confidence: 99%

Demonstration of the first SiC power integrated circuit

Sheng

Zhang

Су

et al. 2008

Solid-State Electronics

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Section: Gate and Isolation Implantationmentioning

confidence: 99%

Demonstration of the first SiC power integrated circuit

Sheng

Zhang

Су

et al. 2008

Solid-State Electronics

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“…Moreover, GaN-based devices still lack a robust MOS gate technology to ensure normally OFF operation. Junction FET (JFET) offers a feasible solution for a normally OFF device and has been studied considerably for both Si-and SiC-based power devices [9], [10]. Since the gate drive voltage in any JFET is limited to a maximum voltage equivalent to its bandgap, wide bandgap materials, like SiC and GaN, have advantages over Si.…”

Section: Introductionmentioning

confidence: 99%

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET

Chowdhury

2015

IEEE Trans. Electron Devices

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Two novel gallium nitride-based vertical junction FETs (VJFETs), one with a vertical channel and the other with a lateral channel, are proposed, designed, and modeled to achieve a 1.2 kV normally OFF power switch with very low ON resistance (R ON ). The 2-D drift diffusion model of the proposed devices was implemented using Silvaco ATLAS. A comprehensive design space was generated for the vertical channel VJFET (VC-VJFET). For a well-designed VC-VJFET, the breakdown voltage (V BR ) obtained was 1260 V, which is defined in this study as the drain-to-source voltage at an OFF-state current of 1 μA · cm −2 and a peak electric field not exceeding 2.4 MV/cm. The corresponding R ON was 5.2 m · cm 2 . To further improve the switching device figure of merit, a merged lateral-vertical geometry was proposed and modeled in the form of a lateral channel VJFET (LC-VJFET). For the LC-VJFET, a breakdown voltage of 1310 V with a corresponding R ON of 1.7 m · cm 2 was achieved for similar thicknesses of the drift region. This paper studies the design space in detail and discusses the associated tradeoffs in the R ON and V BR in conjunction with the threshold voltage (V T ) desired for the normally OFF operation. Index Terms-Gallium nitride (GaN), transistor modeling, vertical junction FET (VJFET).

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“…SiC Schottky Barrier Diodes (SBDs) are now commercially available [3,4] and SiC transistors are being developed by a few companies and research groups. While a significant amount of work has been reported on SiC discrete power devices, developments on SiC-based integrate-able power devices have been much limited [5,6] until some recent work reporting exciting progresses in achieving devices with low specific on-resistance and the first simple monolithically integrated power IC on SiC [7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

“…Both the high-voltage power device and the low-voltage circuitry are fabricated with the same process flow on the same multi-layer structure that comprises a voltage-blocking P-epi layer, a field-stopping P buffer epi layer and an N+ substrate. More structural details and fabrication processes of the power IC can be found in [9]. To ensure appropriate cascaded logic inverter function, the 4H-SiC N-channel LJFETs are designed to have a positive threshold voltage (normally-off) [8] and to have their sizes matching the corresponding load resistor.…”

Section: Introductionmentioning

confidence: 99%

High Frequency Switching of SiC High Voltage LJFET

Sheng

Zhang

Су

et al. 2008

2008 20th International Symposium on Power Semiconductor Devices and IC's

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In this paper, inductive-load switching of a high voltage lateral JFET (HV-LJFET) on 4H-SiC is investigated with a monolithically integrated driver and with an external driver for high frequency, high temperature applications. A new 'capacitor-coupled' gate driver circuitry is proposed and optimized to utilize a standard MOS driver and enable fast switching speed without the need for a negative power supply. Switching times and losses of the SiC HV-LJFET are characterized under various driver conditions and device temperatures. The results reveal that the temperatureindependent, high switching speed of the SiC LJFET makes it possible to hard-switch at 3MHz, 200V, 1.2A and 250°C with good efficiency, significantly higher than silicon devices with similar voltage ratings.Index terms: junction field-effect transistor (JFET), silicon carbide (SiC), power integrated circuits, high frequency I.

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1000-V 9.1-$\hbox{m}\Omega \cdot \hbox{cm}^{2}$ Normally Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuit Applications

Cited by 34 publications

References 12 publications

Demonstration of the first SiC power integrated circuit

Demonstration of the first SiC power integrated circuit

Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET

High Frequency Switching of SiC High Voltage LJFET

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