Design of 1.2 kV Power Switches With Low <inline-formula> <tex-math notation="LaTeX">$R_{\mathrm{{\scriptscriptstyle ON}}}$ </tex-math></inline-formula> Using GaN-Based Vertical JFET

Abstract

Two novel gallium nitride-based vertical junction FETs (VJFETs), one with a vertical channel and the other with a lateral channel, are proposed, designed, and modeled to achieve a 1.2 kV normally OFF power switch with very low ON resistance (R ON ). The 2-D drift diffusion model of the proposed devices was implemented using Silvaco ATLAS. A comprehensive design space was generated for the vertical channel VJFET (VC-VJFET). For a well-designed VC-VJFET, the breakdown voltage (V BR ) obtained was 1260 V, which is defined in this study as the drain-to-source voltage at an OFF-state current of 1 μA · cm −2 and a peak electric field not exceeding 2.4 MV/cm. The corresponding R ON was 5.2 m · cm 2 . To further improve the switching device figure of merit, a merged lateral-vertical geometry was proposed and modeled in the form of a lateral channel VJFET (LC-VJFET). For the LC-VJFET, a breakdown voltage of 1310 V with a corresponding R ON of 1.7 m · cm 2 was achieved for similar thicknesses of the drift region. This paper studies the design space in detail and discusses the associated tradeoffs in the R ON and V BR in conjunction with the threshold voltage (V T ) desired for the normally OFF operation. Index Terms-Gallium nitride (GaN), transistor modeling, vertical junction FET (VJFET).

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A novel GaN vertical junction field-effect transistor with intrinsic reverse conduction capability and kilo-volt breakdown voltage

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