Demonstration of the first SiC power integrated circuit

Sheng, Kuang; Zhang, Yongxi; Су, Минг; Zhao, J.H.; Li, Xueqing; Alexandrov, Petre; Fursin, L.

doi:10.1016/j.sse.2008.06.037

Cited by 25 publications

(11 citation statements)

References 12 publications

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“…The high temperature reliability of unipolar SiC devices has been found to be as good as that of Si-diodes [10]. Regarding controlled switches, MOSFET have not reached yet maturity: their oxide layer has poor reliability under high temperature and high voltage; the carrier mobility in their channel is low, and charge trapping in the gate oxide causes threshold voltage instability [11]. Apparently, some of these limitations have been overcome recently, as SiC MOSFETs operating above 200°C have been demonstrated [12], but without any information about reliability and ageing.…”

Section: Unipolar Devicesmentioning

confidence: 99%

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State of the art of high temperature power electronics

Buttay

Planson

Allard

et al. 2011

Materials Science and Engineering: B

322

125

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High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500°C, whereas silicon is limited to 150-200°C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200°C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).

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Section: Unipolar Devicesmentioning

confidence: 99%

“…Recently, the first SiC-based integrated circuit has been announced [11]. It should eventually allow very high temperature drivers, or monolithic integration of drivers and power.…”

Section: High Temperature Control Circuitsmentioning

confidence: 99%

State of the art of high temperature power electronics

Buttay

Planson

Allard

et al. 2011

Materials Science and Engineering: B

322

125

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show abstract

“…The intrinsic parasitic components, such as capacitance and resistance, may affect the switching behavior of the device, and the gate-tosource capacitance (C GS ) together with the specific onresistance (R on,sp ) dominates the switching speed [11,12]. Therefore, the switching characteristics are related to changes in RC delay time (τ RC ) through C GS Table 1).…”

Section: Rc Delay Timementioning

confidence: 99%

Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Kang¹,

Bahng²,

Kim

et al. 2012

Journal of Electrical Engineering and Technology

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-In this paper, we study the transient characteristics of 4H-SiC DMOSFETs with different interface charges to improve the turn-on rising time. A physics-based two-dimensional mixed device and circuit simulator was used to understand the relationship between the switching characteristics and the physical device structures. As the SiO 2 /SiC interface charge increases, the current density is reduced and the switching time is increased, which is due primarily to the lowered channel mobility. The result of the switching performance is shown as a function of the gate-to-source capacitance and the channel resistance. The results show that the switching performance of the 4H-SiC DMOSFET is sensitive to the channel resistance that is affected by the interface charge variations, which suggests that it is essential to reduce the interface charge densities in order to improve the switching speed in 4H-SiC DMOSFETs.

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“…It can overcome the ultimate performances reached by Si devices, in terms of power handling, maximum operating temperature and conversion efficiency in power module [4,5]. The unique properties of the 4H-SiC poly-type include high critical electric field (3 MV/cm), large bandgap (3.2 eV), high saturation velocity (2×10 7 cm/s), high thermal conductivity (4.9 W/(cm K)) and good electron mobility (~1000 cm 2 /Vs for //c-axis) [6]. SiC can operate efficiently in high-temperature environments [7] and at high switching frequencies [8].…”

Section: Introductionmentioning

confidence: 99%

Diamond / SiC heterojunctions

Mukherjee

Mendes

Alves

et al. 2016

2016 12th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME)

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Abstract-Diamond and SiC are wide bandgap (WBG) materials which can be used to fabricate high power devices with improved performance. The combination of these materials into one single device is expected to bring some benefits, like a better thermal management with a corresponding increase in the operating power. Diamond films deposited by Chemical Vapor Deposition (CVD) can be doped with boron, making them p-type semiconductors. Diamond films deposited on foreign substrates are intrinsically polycrystalline, so the quality of the interface, determined by deposition conditions and seeding method, plays a critical role in the heterojunction characteristics, impacting both reverse current and breakdown voltage. This work reports the fabrication and characterization of p-diamond / n-SiC heterojunctions. P-type polycrystalline diamond (PCD) films were deposited directly on the surface on n-type SiC commercial wafers by Hot Filament CVD (HFCVD) using different seeding techniques. I-V characteristics of the obtained heterojunctions were measured at room temperature and the quality and morphology of the diamond films were assessed by scanning electronic microscopy (SEM) and Raman spectroscopy. The influence of the different seeding techniques on the I-V characteristics is discussed.

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Demonstration of the first SiC power integrated circuit

Cited by 25 publications

References 12 publications

State of the art of high temperature power electronics

State of the art of high temperature power electronics

Impact of Interface Charges on the Transient Characteristics of 4H-SiC DMOSFETs

Diamond / SiC heterojunctions

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