100 GHz dynamic frequency divider in SiGe bipolar technology

A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback

“…Fig. 1 shows a relation between the operation frequency, locking range, and DC power consumption for recently reported Si-based ILFDs and dynamic FDs that operate at mm-wave bands (static FDs are not included due to lack of sufficient data points at this frequency range) [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. The plot clearly shows the expected tendency: dynamic FDs show wide locking ranges but only at the expense of huge power dissipation, while ILFD can reach higher frequencies with much smaller DC power although the locking range is limited.…”

“…1. Reported operation frequency range of various Si-based frequency dividers [8][9][10][11][12][13][14][15][16][17][18][19][20][21][22]. of 1/(2•T D ) at the same location for each stage will result in the divide-by-N function.…”

A New Regenerative Divider by Four up to 160 GHz in SiGe Bipolar Technology

“…For InP-based HBT technologies, a dynamic divider operating up to 150 GHz [1] has been presented. Recently, regenerative dividers in SiGe bipolar technology (HBTs) with a maximum operating input frequency of 110 GHz [2] and 100 GHz [3] have been reported. In CMOS technology an operating frequency of 40 GHz has been achieved [4].…”

Low-power 100 GHz shunt-peaked regenerative frequency divider using 0.18 µm SiGe BiCMOS

“…In particular, a phase-locked loop is often required in these systems for the local oscillator in which a high-speed and wideband frequency divider is indispensible. A regenerative frequency divider (RFD) remains the topology of choice to achieve the best compromise among bandwidth, speed, and power [2][3][4][5][6]. For even higher operating frequencies at D-band (110 -170 GHz), dynamic dividers with increased complexity and current consumption based on CherryHooper [5] and dual mixing [6] have been reported with more advanced SiGe technologies (f max 300 GHz).…”

“…In this Letter, we present a low supply voltage and low-power high-speed 100 GHz regenerative frequency divider. This low-power design implemented in a low-cost 200/180 GHz f T /f max TowerJazz 0.18 mm SiGe BiCMOS technology compared with [2,5,6] is achievable thanks to the shunt-peaked inductor utilised to reinforce the feedback loop dynamics at high frequency (HF). is also included to facilitate on-wafer measurement.…”