100-Gb/s Multiplexing and Demultiplexing IC Operations in InP HEMT Technology

Murata, Koichi; Sano, Kimikazu; Kitabayashi, H.; Sugitani, Suehiro; Sugahara, H.; Enoki, T.

doi:10.1109/jssc.2003.820854

Cited by 49 publications

(19 citation statements)

References 9 publications

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“…The details of the fabrication process technology are described elsewhere. 13,14) In order to enhance the high-speed characteristics of the HEMTs, the gate length was reduced to 80 nm.…”

Section: Epitaxial Growth and Device Fabricationmentioning

confidence: 99%

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Sugiyama¹,

Kosugi²,

Yokoyama³

et al. 2008

jjap

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This paper reports InGaAs/InP composite-channel (CC) high electron mobility transistors (HEMTs) grown by metal-organic vapor-phase epitaxy (MOVPE) with excellent breakdown and high-speed characteristics. Atomic force microscopy (AFM) reveals high-quality heterointerfaces between In(Ga,Al)As and In(Al)P. Fabricated 80-nm-gate CC HEMTs exhibit on-and off-state breakdown (burnout) voltages estimated at higher than 3 and 8 V. An excellent current-gain cutoff frequency ( f T ) of 186 GHz is also obtained in the CC HEMTs. The on-wafer uniformity of CC-HEMT characteristics is comparable to those of our mature 100-nm-gate InGaAs single-channel HEMTs. Bias-stress aging tests reveals that the lifetime of CC HEMTs is expected to be comparable to that of our conventional InGaAs single-channel HEMTs.

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“…The details of the fabrication process technology are described elsewhere. 13,14) In order to enhance the high-speed characteristics of the HEMTs, the gate length was reduced to 80 nm.…”

Section: Epitaxial Growth and Device Fabricationmentioning

confidence: 99%

High-Performance InGaAs/InP Composite-Channel High Electron Mobility Transistors Grown by Metal–Organic Vapor-Phase Epitaxy

Sugiyama¹,

Kosugi²,

Yokoyama³

et al. 2008

jjap

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“…Figure 1 shows the performance of a packaged 2:1 multiplexer module based on such an advanced SiGe process. In parallel, traditional high performance GaAs-and InP-based high electron mobility (HEMT) and hetero-junction bipolar transistor (HBT) have also made a significant impact in the realization of digital MMICs with extremely impressive switching speeds capable of 100 GBit/s operation [5][6][7][8][9][10], and traveling amplifiers operating towards 100 GHz bandwidth [11]. The performance capability of current pHEMT power amplifiers is illustrated in figure 2, which shows the output waveform of a packaged 60 GHz bandwidth GaAs pHEMT distributed amplifier operating at speeds up to 100 GBit/s.…”

Section: Key Technologiesmentioning

confidence: 99%

80+ GBit/s ETDM systems implementation: an overview of current technologies

Lee¹

2006

2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference

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“…Previous demultiplexers and D-FFs working at or above 80 Gb/s include [1][2][3][4]. The work is motivated by the expectation that a 100-Gb/s Ethernet standard will eventually succeed 10 Gb/s in the Ethernet standard hierarchy [5].…”

Section: Introductionmentioning

confidence: 99%