Thickness dependence of the properties of indium tin oxide (ITO) FILMS prepared by activated reactive evaporation

Abstract

Tin doped indium oxide thin films were prepared on glass substrates kept at room temperature, by activated reactive evaporation (ARE). Structural, electrical and optical properties were studied for films having different thickness. The resulting films are polycrystalline and show ≈ 90 % transmission in the visible region. Hall effect measurements at room temperature for a film with a nominal thickness of ≈ 350 nm shows a relatively high carrier concentration ≈ 6.3 × 10 20 cm −3 , mobility ≈16 cm 2 V −1 s −1 , with a low resistivity ≈ 1.01×10 −3 Ω cm.

Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells

“…As shown in Fig. 6, the transmittance of the ITO film remains > 80% when the wavelength is above 390 nm, which is comparable to commercial and other reports [15,16]. Assuming that the incident light is the sum of the light reflected, transmitted and absorbed, it can be roughly calculated how many percentage of light absorbed by the ITO film.…”

The effect of solvents and the thickness on structural, optical and electrical properties of ITO thin films prepared by a sol–gel spin-coating process

“…In addition, different salts of indium can be utilized to act as indium precursor for the synthesis of the ITO sol-gel solutions, indium nitrate is more appropriate for commercialized applications due to its low price rather than other indium salts [24]. On the other hand, the coating number is one of factors that has an effect on morphology and conductivity of thin films that has been studied previously [25], while the effect of type solvent on the ITO thin films has rarely been investigated [23,26,27] and the influence of acetyl acetone and ethanol was not compared together yet.…”

Photoelectric and photomagnetic response of indium-tin oxide films

“…Проводимость ITO обусловливается технологическим процессом нанесения и отжига пленок. Основными факторами, обусловливающими проводимость пленок, являются размер кристаллитов и тол-щина пленки [9,10]. Толщина для наших образцов составляла 350 нм, неоднородность по толщине, со-гласно спецификации изготовителя, не превышала 35 нм.…”