Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

Pereyra, I.; Villacorta, C. A.; Carreño, M.N.P.; Prado, Rogério Junqueira; Fantini, M.C.A.

doi:10.1590/s0103-97332000000300009

Cited by 4 publications

(5 citation statements)

References 7 publications

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“…It has been proposed that increasing the hydrogen dilution reduces the CH n content in the film by hydrogen preferential etching the carbon bonds [22]. We propose the other possibility that the hydrogen may remove methyl radicals as methaneboth hypotheses explain the observation that a higher hydrogen dilution results in less absorption from CH n bands.…”

Section: Hydrogen Dilution Effectsmentioning

confidence: 65%

“…The majority carbon atoms in the film are incorporated through reacting with silane radicals so that soft graphitelike structure is avoided [23]. In addition, a higher CH 4 to SiH 4 flow ratio is needed to deposit the film with equivalent Si and C atomic ratio in low power regime [24], and the maximum Si-C bond density has been deposited at about 15% silane in precursor gas [22]. The Si-C bond density (N) can be estimated from integral of FT-IR absorption spectra by means of the following equation 1 (2) where the integral of the absorption spectra α(ω) as a function of frequency (ω) was normalized by the sample thickness.…”

Section: Resultsmentioning

confidence: 99%

“…Most SiC films deposited by PECVD have an amorphous structure without long-range periodic order. Pereyra et al have suggested that the Si-C bond density is a function of hydrogen dilution and silane ratio in PECVD process, and highly ordered a-SiC x :H is possible [22]. This work explored the process to grow silicon carbide of different Si-C bond densities at different temperatures, and compared their encapsulation properties and performances.…”

Section: Low Temperature Deposition Process: Deposition Temperature Lmentioning

confidence: 99%

“…However, the availability of silane in the plasma may promote the formation of a random bonding structure rather than preferred hetero-nuclear (Si-C) bond [22], and thus, relative lower Si-C bond density compared to silane starving as indicated in Table I.…”

Section: Hydrogen Dilution Effectsmentioning

confidence: 99%

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Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

et al. 2007

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A fully integrated, wireless neural interface device is being developed to free patients from the restriction and risk of infection associated with a transcutaneous wired connection. This device requires a hermetic, biocompatible encapsulation layer at the interface between the device and the neural tissue to maintain long-term recording/stimulating performance of the device. Hydrogenated amorphous silicon carbide (a-SiC x :H) films deposited by a plasma enhanced chemical vapor deposition using SiH 4 , CH 4 , and H 2 precursors were investigated as the encapsulation layer for such device. Si-C bond density, measured by Fourier transform infrared absorption spectrometer, suggests that deposition conditions with increased hydrogen dilution, increased temperature, and low silane flow typically result in increase of Si-C bond density. From the variable angle spectroscopic ellipsometry measurement, no dissolution of a-SiC x :H was observed during soaking tests in 90°C phosphate buffered saline. Conformal coating of the a-SiC x :H in Utah electrode array was observed by scanning electron microscope. Electrical properties were studied by impedance spectroscopy to investigate the performance of a-SiC x :H as an encapsulation layer, and the results showed long term stability of the material.

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Section: Hydrogen Dilution Effectsmentioning

confidence: 65%

Section: Resultsmentioning

confidence: 99%

Section: Low Temperature Deposition Process: Deposition Temperature Lmentioning

confidence: 99%

Section: Hydrogen Dilution Effectsmentioning

confidence: 99%

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Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

et al. 2007

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“…Compared with these techniques, the conventional chemical vapor deposition (CVD) requires higher deposition temperatures. However, higher temperatures may enhance the chemical order [13,14], therefore can increase the optical energy gap of the grown materials and improving their doping efficiency [15][16][17]. It has been reported [18] that the highest structural order in amorphous films is achieved just before the transition from amorphous to crystalline phase.…”

Section: Introductionmentioning

confidence: 99%

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

Wang

Dimitrijev

Han

et al. 2009

Journal of Crystal Growth

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a b s t r a c tThis paper presents a study of the transition between amorphous and crystalline phases of SiC films deposited on Si(1 0 0) substrate using H 3 SiCH 3 as a single precursor by a conventional low-pressure chemical vapor deposition method in a hot-wall reactor. The microstructure of SiC, characterized by X-ray diffraction and high-resolution transmission electron microscopy, is found to vary with substrate temperature and H 3 SiCH 3 pressure. The grain size decreases with increasing MS pressure at a given temperature and also decreases with reducing temperature at a given MS pressure. The deposition rates are exponentially dependent on the substrate temperature with the activation energy of around 2.6 eV. The hydrogen compositional concentration in the deposited SiC films, determined by secondary ion mass spectrometry depth profiling, is only 2.9% in the nanocrystalline SiC but more than 10% in the amorphous SiC, decreasing greatly with increasing deposition temperature. No hydride bonds are detected by Fourier transform infrared spectroscopy measurements. The chemical order of the deposited SiC films improves with increasing deposition temperature.

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Material and mechanical characterization of PECVD deposited a-SiC:H with H<inf>2</inf> dilution

Adithi

Deshpande

Bhat

2014

2014 IEEE 2nd International Conference on Emerging Electronics (ICEE)

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Highly ordered amorphous silicon-carbon alloys obtained by RF PECVD

Cited by 4 publications

References 7 publications

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

Characterization of a-SiCx:H thin films as an encapsulation material for integrated silicon based neural interface devices

Transition between amorphous and crystalline phases of SiC deposited on Si substrate using H3SiCH3

Material and mechanical characterization of PECVD deposited a-SiC:H with H<inf>2</inf> dilution

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