Effects of La2O3-Doping and Sintering Temperature on the Dielectric Properties of BaSrTiO3 Ceramics

Glass-Free CuMoO4 Ceramic with Excellent Dielectric and Thermal Properties for Ultralow Temperature Cofired Ceramic Applications

“…Relative density is found to increase with sintering temperature and reaches a saturated value of 96% at 650 °C. A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth . The results indicate that the CMO ceramic can be well densified at 650 °C.…”

“…A slight decrease in the densification is observed with further increase in sintering temperature, which may be due to the irregular grain growth. 31 The results indicate that the CMO ceramic can be well densified at 650 °C.…”

The effect of titanium excess and deficiency on the microstructure and dielectric properties of lanthanum doped Ba0.55Sr0.45TiO3 with colossal permittivity

“…Furthermore, at higher temperatures and frequencies the losses rapidly increased. [4] In the case of other lanthanum doped BST compositions: Ba0.60Sr0.30TiO3 [10], Ba0.74Sr0.26TiO3 [11] and Ba0.8Sr0.2TiO3 [12], no colossal permittivity has been observed. Ba0.60Sr0.30TiO3 showed a room temperature permittivity of 2750.2 and tan  of 0.0137 at 10 kHz with 0.5 mol.% of lanthanum addition i.e.…”

“…a significantly reduced permittivity (>7000) compared to undoped BST [10]. Both the Ba0.74Sr0.26TiO3 and Ba0.8Sr0.2TiO3 compositions also showed a relative permittivity under 10,000 and a low tan  < 0.015 at room temperature, depending on the amount of lanthanum and other dopants [11], [12]. It is apparent that the dielectric properties are influenced not only by the Ba:Sr ratio and the amount of lanthanum and other dopants present but also by the various fabrication routes by which the ceramics are prepared [5][6][7].…”