Temperature influence on mobility and charge density model of photovoltaic cells

Souza, J.S.T.; Sousa, N.C.A. de

doi:10.1590/1806-9126-rbef-2018-0272

Cited by 3 publications

(9 citation statements)

References 13 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Reggiani et al (2000) showed the strong decrease of the mobility of the electrons and the holes with temperature increase in silicon devices. In the same direction, Souza and Sousa (2019) have shown that temperature increase leads to a decrease of the mobility of the electrons and the holes. They also showed that the intrinsic carrier density and the reverse saturation current density increase with temperature increase.…”

Section: Introductionmentioning

confidence: 86%

“…(1) The electrons and the holes mobility ( , np m ) coefficients are (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020):…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

“…The index m is linked to the type of the doping material (type n or type p). In this work the n-type doping concentration of N d =10 18 cm −3 and p-type of N a =10 16 cm -3 are considered (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020).…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

“…In addition, many works have shown that temperature increase has strong influences on electronic and intrinsic properties of semiconductor materials and photovoltaic cells (Reggiani et al, 2000;Souza and Sousa, 2019;Dhar et al, 2005;Alkuhayli et al, 2021;Amar et al, 2021;Kabbani and Honnurvali, 2021;Medekhel et al, 2022;Santos et al, 2022). Reggiani et al (2000) showed the strong decrease of the mobility of the electrons and the holes with temperature increase in silicon devices.…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Savadogo¹,

Pegdwindé²,

Ouédraogo³

et al. 2022

Int. J. Phys. Sci.

View full text Add to dashboard Cite

Studies on concentrated light influence do not take into account the effect of the heating and this proves to be harmful on photovoltaic parameters. The main purpose of this work is to study the effects of light concentration and the heating caused by this concentration on intrinsic properties and carrier density profile. A thermal model of the PV cell is proposed. By applying the power balance at the steady-state, the PV cell thermal equation is determined. The resolution of this equation leads to temperature profile which shows a rapid increase with light concentration. The mobility n  and diffusion n D coefficients of electrons increase to reach their maxima, respectively 2 1 1 max ( ) 1895,31 n cm V s    at C=6,77 Suns where temperature is T=430,92 K and 21 max ( ) 76,55 . n D cm s   at C= 12,59 Suns where temperature is T=508,24; before decreasing. However, for the holes these parameters decrease slowly with concentration increase. Silicon gap energy decreases while electrons intrinsic density increases with increasing concentration. The variations of these parameters are explained on one hand by their dependence on temperature but also by temperature profile with concentration. An electrical model of the PV cell under variable concentration is also proposed and from which the carrier's density is determined. It emerges that the carrier density increases significantly with concentration ratio. This fact is explained by the photo-generation increase with concentration. And also, by thermal generation increase linked to temperature increases with concentration increase. Results also show that carriers density is greater in the rear side compared to the zone near the junction in opposite to authors who did not take into account temperature effect and who showed that carriers density is greater at the illuminated face.

show abstract

Section: Introductionmentioning

confidence: 86%

“…(1) The electrons and the holes mobility ( , np m ) coefficients are (Souza and Sousa, 2019;Dhar et al, 2005;Savadogo et al, 2020):…”

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

Section: The Silicon Intrinsic Propertiesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Savadogo¹,

Pegdwindé²,

Ouédraogo³

et al. 2022

Int. J. Phys. Sci.

View full text Add to dashboard Cite

show abstract

“…Many authors [10]- [20] have shown that temperature has harmful effects on all electronic and electrical parameters of a silicon solar cell. However, these authors did not work under concentrated light.…”

Section: Introductionmentioning

confidence: 99%

Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

Savadogo¹,

Soro²,

Konaté³

et al. 2020

SGRE

View full text Add to dashboard Cite

It is well known that temperature acts negatively on practically all the parameters of photovoltaic solar cells. Also, the solar cells which are subjected to particularly very high temperatures are the light concentration solar cells and are used in light concentration photovoltaic systems (CPV). In fact, the significant heating of these solar cells is due to the concentration of the solar flux which arrives on them. Light concentration solar cells appear as solar cells under strong influences of heating and temperature. It is therefore necessary to take into account temperature effect on light concentration solar cells performances in order to obtain realistic results. This one-dimensional study of a crystalline silicon solar cell under light concentration takes into account electrons concentration gradient electric field in the determination of the continuity equation of minority carriers in the base. To determine excess minority carrier's density, the effects of temperature on the diffusion and mobility of electrons and holes, on the intrinsic concentration of electrons, on carrier's generation rate as well as on width of band gap have also been taken into account. The results show that an increase of temperature improves diffusion parameters and leads to an increase of the short-circuit photocurrent density. However, an increase of temperature leads to a significant decrease in open-circuit photovoltage, maximum electric power and conversion efficiency. The results also show that the operating point and the maximum power point (MPP) moves to the open circuit when the cell temperature increases.

show abstract

Investigation of optical, dielectric, and conduction mechanism in lead-free perovskite CsMnBr₃

Krimi,

Hajlaoui,

Abdelbaky

et al. 2024

RSC Adv.

View full text Add to dashboard Cite

show abstract

Temperature influence on mobility and charge density model of photovoltaic cells

Cited by 3 publications

References 13 publications

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

Investigation of optical, dielectric, and conduction mechanism in lead-free perovskite CsMnBr₃

Contact Info

Product

Resources

About

Temperature influence on mobility and charge density model of photovoltaic cells

Cited by 3 publications

References 13 publications

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Uncooled PV cell under variable light concentration: Determination of profiles of the temperature, the intrinsic properties and the carrier density

Temperature Effect on Light Concentration Silicon Solar Cell’s Operating Point and Conversion Efficiency

Investigation of optical, dielectric, and conduction mechanism in lead-free perovskite CsMnBr3

Contact Info

Product

Resources

About

Investigation of optical, dielectric, and conduction mechanism in lead-free perovskite CsMnBr₃