Design and Fabrication of GaAs Based MOSFET by Physical Vapor Deposition Method

Challam, Arkilang; Chelliah, Cyril Robinson Azariah John; Nirmal, D.; Swaminathan, Rajesh

doi:10.1166/mat.2018.1528

Cited by 4 publications

(4 citation statements)

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“…For example, the on/off ratio (∼10 5 ) of the fabricated p-type GaAs-on-insulator (GaAs-OI) junctionless FET is higher than those (∼10 2 ) of both the p-type GaSb- and InGaSb-OI ones with a similar channel thickness ( t ch ) of ∼20 nm. − Second, the observed μ e of GaAs is about 8000 cm 2 /V·s at 300 K, 1.7 times greater than those of GaSb and InGaSb . The advanced n-type fin, planar, and nanowire FETs based on GaAs with high drive currents have been widely fabricated with mature technology. − Such good p- and n-type device performance offers a great possibility for GaAs to be used in CMOS ICs.…”

Section: Introductionmentioning

confidence: 97%

Performance Limit of Ultrathin GaAs Transistors

Fang

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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High-electron-mobility group III–V compounds have been regarded as a promising successor to silicon in next-generation field-effect transistors (FETs). Gallium arsenide (GaAs) is an outstanding member of the III–V family due to its advantage of both good n- and p-type device performance. Monolayer (ML) GaAs is the limit form of ultrathin GaAs. Here, a hydrogenated ML GaAs (GaAsH2) FET is simulated by ab initio quantum-transport methods. The n- and p-type ML GaAsH2 metal–oxide–semiconductor FETs (MOSFETs) can well satisfy the on-state current, delay time, power dissipation, and energy–delay product requirements of the International Technology Roadmap for Semiconductors until the gate length is scaled down to 3/4 and 3/5 nm for the high-performance/low-power applications, respectively. Therefore, ultrathin GaAs is a prominent channel candidate for devices in the post-Moore era. The p-type ML GaAsH2 MOSFETs with a 2% uniaxially compressive strain and the unstrained n-type counterparts have symmetrical performance for the high-performance application, making ultrathin GaAs applicable for complementary MOS integrated circuits.

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Section: Introductionmentioning

confidence: 97%

Performance Limit of Ultrathin GaAs Transistors

Fang

Liu

et al. 2022

ACS Appl. Mater. Interfaces

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“…Otherwise, the value of resistivity of semi-insulating GaAs is about 10 7 Ωcm in practical usages. Therefore, there are different techniques of doping and altering the properties of GaAs [5], [6] MOSFETs (metal-oxide-semiconductor field effect transistors) are offered in enhancement and depletion modes of operation. Moreover, the enhancement and depletion types of MOSFETs are categorized into p-channel and n-channel types of transistor as shown in Fig.…”

Section: Figmentioning

confidence: 99%

Effects of energy band structure on gallium arsenide based MOSFET

Kyaw¹,

Aye²

2020

J. Adv. Sci. Eng.

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This research work is focused on material science and semiconductor engineering. It emphasized on the semiconductor material such as Gallium arsenide (GaAs). The Gallium arsenide semiconductor material was used as a group III-V compound for metal-oxide semiconductor field effect transistor (MOSFET) modeling. The band-gap energy structures were analyzed by using material parameters such as Varshni parameters, temperature and doping concentrations. Then, an electrical characteristic was carried out depending on the current and voltage relationship. The current flowing in the device is associated with a gate voltage applied to the device. From this paper, the analysis of MOSFET modeling was investigated using mathematical equations and MATLAB simulation.

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“…From the bulk to the atomic level, transistors have been interestingly studied around the globe for the application of electronic devices. This research was therefore motivated by the various semiconductor materials applicable to the replacement of the dielectric channel/ gate [2,3].…”

Section: Introductionmentioning

confidence: 99%

Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

Chelliah¹,

Swaminathan²

2021

Practical Applications of Laser Ablation

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The semiconductor industry flourished from a simple Si-based metal oxide semiconductor field effect transistor to an era of MOSFET-based smart materials. In recent decades, researchers have been replacing all the materials required for the MOSFET device. They replaced the substrate with durable materials, lightweight materials, translucent materials and so on. They have came up with the possibility of replacing dielectric silicon dioxide material with high-grade dielectric materials. Even then the channel shift in the MOSFET was the new trend in MOSFET science. From the bulk to the atomic level, transistors have been curiously researched across the globe for the use of electronic devices. This research was also inspired by the different semiconductor materials relevant to the replacement of the dielectric channel/gate. Study focuses on diverse materials such as zinc oxides (ZnO), electrochromic oxides such as molybdenum oxides (including MoO3 and MoO2) and other binary oxides using ZnO and MoO3. The primary objective of this research is to study pulsed laser deposited thin films such as ZnO, MoO3, binary oxides such as binary ZnO /MoO3, ZnO /TiO2 and ZnO/V2O5 and to analyse their IV properties for FET applications. To achieve the goal, the following working elements have been set: investigation of pulsed laser deposited thin film of metal oxides and thin film of binary metal oxide nanostructures with effects of laser repetition and deposition temperatures.

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Design and Fabrication of GaAs Based MOSFET by Physical Vapor Deposition Method

Cited by 4 publications

References 0 publications

Performance Limit of Ultrathin GaAs Transistors

Performance Limit of Ultrathin GaAs Transistors

Effects of energy band structure on gallium arsenide based MOSFET

Binary Metal Oxides Thin Films Prepared from Pulsed Laser Deposition

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