Effects of energy band structure on gallium arsenide based MOSFET

Abstract

This research work is focused on material science and semiconductor engineering. It emphasized on the semiconductor material such as Gallium arsenide (GaAs). The Gallium arsenide semiconductor material was used as a group III-V compound for metal-oxide semiconductor field effect transistor (MOSFET) modeling. The band-gap energy structures were analyzed by using material parameters such as Varshni parameters, temperature and doping concentrations. Then, an electrical characteristic was carried out depending on the current and voltage relationship. The current flowing in the device is associated with a gate voltage applied to the device. From this paper, the analysis of MOSFET modeling was investigated using mathematical equations and MATLAB simulation.