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The quest for high device density in advanced technology nodes makes strain engineering increasingly difficult in the last few decades. The mechanical strain and performance gain has also started to diminish due to aggressive transistor pitch scaling. In order to continue Moore’s law of scaling, it is necessary to find an effective way to enhance carrier transport in scaled dimensions. In this regard, the use of alternative nanomaterials that have superior transport properties for metal-oxide-semiconductor field-effect transistor (MOSFET) channel would be advantageous. Because of the extraordinary electron transport properties of certain III–V compound semiconductors, III–Vs are considered a promising candidate as a channel material for future channel metal-oxide-semiconductor transistors and complementary metal-oxide-semiconductor devices. In this review, the importance of the III–V semiconductor nanostructured channel in MOSFET is highlighted with a proposed III–V GaN nanostructured channel (thickness of 10 nm); Al2O3 dielectric gate oxide based MOSFET is reported with a very low threshold voltage of 0.1 V and faster switching of the device.

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The binary metal oxides of ZnO and MoO3 (ZMO) nanostructured thin films were prepared by pulsed laser deposition at different temperatures such as 298(as deposited), 623, 773 and 923K at 10Hz laser repetition rates for 30 min. The films were characterized by XRD, UV-Visible spectroscopy and IV measurements. The XRD discloses the amorphous nature of the film deposited below 773K. Few peaks which were seen in 923K sample revealed the formation of ZnMoO4 and Zn3Mo2O9 for the binary ZMO thin films. The optical energy band-gap was measured using Tauc plot and was found to be 2.4 to 2.7eV. These films were investigated by electrochemical impedance spectroscopy over a frequency range of 1Hz–1MHz, for measuring temperatures lying in 298K-473K domain. The frequency response of the imaginary impedance (Z′′) shows relaxation behavior along every measuring temperature. The binary ZMO pulsed laser deposited at high temperatures demonstrates better semiconducting behavior. The activation energy (Ea) which is minimum for high temperature PLD thin films was determined from the Arrhenius plot based on impedance.

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