10 Gbps Operation of Top Air-Clad Lateral Junction Waveguide-Type Photodiodes

Shindo, Takahiko; Koguchi, Takayuki; Futami, Motoo; Doi, Kyouhei; Yamahara, Yoshiyuki; Lee, Jieun; Amemiya, Tomohiro; Nishiyama, N.; Arai, Shigehisa

doi:10.7567/jjap.52.118002

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Cited by 5 publications

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“…Subsequently, the PD was improved by replacing the MQW structure with a GaInAs bulk absorber. 11) The absorber volume is reduced owing to the larger material absorption coefficient of GaInAs. Nevertheless, leakage of the input light into the bottom SI-InP substrate remains an obstacle to increasing the responsivity.…”

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confidence: 99%

20 Gbps operation of membrane-based GaInAs/InP waveguide-type p–i–n photodiode bonded on Si substrate

Gu¹,

Inoue²,

Amemiya³

et al. 2018

Appl. Phys. Express

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A GaInAs/InP waveguide-type p–i–n membrane photodetector is shown to be a strong candidate for on-chip optical interconnection. A responsivity of 0.95 A/W is estimated for a device length of 30 µm. The 3 dB cutoff frequency is measured to be 13.3 GHz at a reverse bias of 3 V, which is in good agreement with the observed clear eye opening pattern up to 20 Gbps for a non-return-to-zero signal. Moreover, a bit error rate of less than 1 × 10−9 is obtained at data rates of 20 and 10 Gbps with input powers of −10 and −13 dBm, respectively.

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confidence: 99%